2019
DOI: 10.20944/preprints201904.0312.v2
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Modeling Dislocation Contrasts Obtained by Accurate-Electron Channeling Contrast Imaging for Characterizing Deformation Mechanisms in Bulk Materials

Abstract: Electron Channeling Contrast Imaging (ECCI) is becoming a powerful tool in Materials Science for characterizing deformation defects. Dislocations observed by ECCI in Scanning Electron Microscope, exhibit several features depending on the crystal orientation relative to the incident beam (white/black line on a dark/bright background). In order to bring new insights concerning these contrasts, we report an original theoretical approach based on the dynamical diffraction theory. Our calculations led, for the firs… Show more

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Cited by 4 publications
(9 citation statements)
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“…Ten phonon configurations were averaged. The ECCI profile shows a left-right asymmetric intensity, consistent with previous experimental and simulated results (Wilkinson & Hirsch, 1997; Zaefferer & Elhami, 2014; Kriaa et al, 2019). The asymmetry is due to the dislocation strain field causing a reversal in lattice plane bending, and therefore electron beam channeling, either side of the dislocation.…”
Section: Resultssupporting
confidence: 90%
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“…Ten phonon configurations were averaged. The ECCI profile shows a left-right asymmetric intensity, consistent with previous experimental and simulated results (Wilkinson & Hirsch, 1997; Zaefferer & Elhami, 2014; Kriaa et al, 2019). The asymmetry is due to the dislocation strain field causing a reversal in lattice plane bending, and therefore electron beam channeling, either side of the dislocation.…”
Section: Resultssupporting
confidence: 90%
“…This can be understood by comparing plasmon de-channeling with the change in channeling conditions induced by the dislocation strain field. The change in deviation parameter s d for a reciprocal vector g due to a displacement vector field u is given as follows (Hirsch et al, 1965; Kriaa et al, 2019):…”
Section: Resultsmentioning
confidence: 99%
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