Modeling heat generation in a submicrometric n+−n−n+ silicon diode

Abstract

Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode Appl.In this paper a hydrodynamic model for electron and phonon transport in silicon semiconductors has been formulated on the basis of the maximum entropy principle to describe off-equilibrium phenomena in submicron devices. One dimensional steady-state simulations of a n + − n − n + silicon diode have been carried out.

Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors

“…However, these various closure assumptions are, at best, only phenomenological and often a consistent physical and mathematical justification is lacking. Lately, a closure assumption based on the Maximum Entropy Principle of extended thermodynamics [6,7] has been successfully applied, both in the parabolic and non-parabolic band approximation, to various types of semiconductors [8][9][10][11][12][13]. The resulting models, which differ for the choice of the moments to assume as field variables, are, in fact, able to describe charge transport due both to electrons and holes and also heat transport due to phonons.…”

Heat generation in silicon nanometric semiconductor devices

“…An accurate description of these phenomena is required and is becoming a primary concern for industrial applications. The heating rate can be computed with more sophisticated hydrodynamic models which are able to describe off-equilibrium regimes (Muscato et al, 1998;Muscato and Di Stefano, 2008, 2011a, c, d, 2012Di Stefano and Muscato, 2012) but we shall not pursue this subject in the sequel. Another possibility for computing a detailed picture of energy dissipation, is to adapt the well known Monte Carlo (MC) simulation method, which has been originally developed for studying hot electron effects when the lattice is considered a thermal reservoir (Muscato, 2000;Majorana et al, 2004;Muscato and Wagner, 2005;Muscato et al, 2010Muscato et al, , 2011).…”

Hydrodynamic modeling of silicon quantum wires

“…In this way a consistent model with a physical basis is obtained, whose validity must be assessed with experimental data or MC simulations. Such approach has been extensively used for simulating the 3D electron transport in sub-micrometric devices, in the case in which the lattice is a thermal bath with constant temperature [24][25][26][27][28] or when the phonons are off-equilibrium [29][30][31][32][33]. The purpose of this paper is to setup a consistent hydrodynamic model for SiNWs using the MEP.…”