Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions

Abstract

A study of the leakage current in strained p + n Si 1−x Ge x /Si hetero-junctions is presented. The reduction in the band gap, induced by stress forces, and the doping level at the hetero-interface, due to the use of halo implantations, are varied by changing the recess depth. A comparison between simulation results and experimental data is presented to analyze the validity of the models used in this work.