We investigated Li-ion distribution profiles at the interfaces between γ-Li 3 PO 4 and metal electrodes using first-principles and one-dimensional continuum-model calculations. Within the allowed range of the chemical potential of Li in γ-Li 3 PO 4 , −6.11 eV μ Li −2.59 eV, which is estimated from the chemical potential diagram of Li, P, O-related chemical compounds, we predict upward band bending near Au(111) and Ni(111) interfaces. We found interstitial Li-ion accumulation for the larger μ Li values and its depth is ca. 3 Å for μ Li = −2.59 eV. For the Li(100) interface with μ Li = −2.59 eV, we predict slight upward band bending and the formation of interstitial Li-ions. However, the downward band bending occurs for μ Li = −6.11 eV, where the accumulated charge carrier corresponds to the Li-ion vacancies. Finally, we suggest that the interstitial Li-ions accumulated within a few Å from the Au(111) interface and the Li-Au alloying play a central role in the switching of the novel memory device.