Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs

Sheu, Yae‐Lin; Yang, Shixuan; Wang, Chih-Chiang; Chang, Chih‐Sheng; Huang, Liping; Huang, Tsung–Yi; Chen, Ming‐Jer; Diaz, C.H.

doi:10.1109/ted.2004.841286

Cited by 52 publications

(7 citation statements)

References 19 publications

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“…The presence of strain fields can significantly influence the efficiency and lifetime of functional materials such as semiconductors, solar cells and Li-ion batteries [1][2][3][4][5][6][7][8][9][10]. In principle, strain can be internally generated by structural defects within the bulk and/or interfaces or can be induced by external loads.…”

Section: Introductionmentioning

confidence: 99%

Influence of elastic strain on the thermodynamics and kinetics of lithium vacancy in bulkLiCoO2

Moradabadi

Kaghazchi

Rohrer

et al. 2018

Phys. Rev. Materials

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The influence of elastic strain on the lithium vacancy formation and migration in bulk LiCoO 2 is evaluated by means of first-principles calculations within density functional theory (DFT). Strain dependent energies are determined directly from defective cells and also within linear elasticity theory from the elastic dipole tensor (G i j ) for ground state and saddle point configurations. We analyze finite size-effects in the calculation of G i j , compare the predictions of the linear elastic model with those obtained from direct calculations of defective cells under strain and discuss the differences. Based on our data, we calculate the variations in vacancy concentration and mobility due to the presence of external strain in bulk LiCoO 2 cathodes. Our results reveal that elastic in-plane and out-of-plane strains can significantly change the ionic conductivity of bulk LiCoO 2 by an order of magnitude and thus strongly affect the performance of Li-secondary batteries.

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Section: Introductionmentioning

confidence: 99%

Influence of elastic strain on the thermodynamics and kinetics of lithium vacancy in bulkLiCoO2

Moradabadi

Kaghazchi

Rohrer

et al. 2018

Phys. Rev. Materials

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“…STI generates a mechanical stress σ on the Si substrate of MOSFETs. [1][2][3][4][5][6][7] σ changes the bandgap energy E g , scattering rate, and diffusion coefficients of dopants. As a consequence, σ changes the transconductance G m , carrier mobility μ, drain current I d , and intrinsic carrier concentration n i .…”

Section: Introductionmentioning

confidence: 99%

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Seo

Kim

Son

et al. 2016

Jpn. J. Appl. Phys.

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A simple and accurate method of estimating the mechanical stress σ on the Si body of a MOSFET is proposed. This method measures the doping concentration of the body, N d, and the onset voltage V hl for the high-level injection of the drain–body junction, uses N d, the ideality factor η, and the Fermi potential ϕf ≈ V hl/2η to calculate the intrinsic carrier concentration n i of the Si body, and then uses the calculated n i to obtain the bandgap energy E g of the Si body. σ is estimated from E g using the deformation potential theory. The estimates of σ agree well with those obtained using previous methods. The proposed method requires one MOSFET, whereas the others require at least two MOSFETs, so the proposed method can give an absolute measurement of σ on the Si body of a MOSFET.

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“…Systematic V th variation due to detailed difference in the environment has been attributed to stress, temperature, or ion implantation damage variation during fabrication process. 3,4 One of the key factors in device V th is junction overlap between gate and source/drain extension. 5 Therefore, the under-gate lateral dopant diffusion needs to be well controlled to avoid V th variation.…”

mentioning

confidence: 99%

Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

2015

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We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls.

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Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs

Cited by 52 publications

References 19 publications

Influence of elastic strain on the thermodynamics and kinetics of lithium vacancy in bulkLiCoO2

Influence of elastic strain on the thermodynamics and kinetics of lithium vacancy in bulkLiCoO2

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

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