Modeling Multi‐Band Effects of Hot Electron Coupled Transport in n‐GaAs

Abstract

We use a full band iterative matrix method to study the high-field transport in n-type GaAs for the first time using three non-parabolic valleys (G, L, and X). The new simulation of transient electrons in GaAs shows that, even if there exist carriers in the X-valley beginning from an electric field E ¼ 10 kV/cm, the two-valley model (G and L) remains still valid until E ¼ 20 kV/cm. We present results for the distribution functions, in the transient and permanent regimes in GaAs in the G-, L-, and X-valleys, for electric fields in the range 1 to 60 kV/cm. These functions allow to calculate all parameters of the first order in both regimes. We obtain good agreement with the experimental velocity-field curves.

An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors

“…This method has been initially used for one and two valleys compound materials [1]. Successively, it has been adapted to the three valleys case in order to study ternary compounds such as GaAsAl [2].…”