Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Qin, Jian; Zhou, Quanbin; Liao, Biyan; Wang, Hong

doi:10.3390/electronics7120410

Cited by 14 publications

(9 citation statements)

References 38 publications

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“…[19] In comparison, the distribution of 2DEG at interface 2 is more delocalized over a few nanometers. [48] This is one of the advantages of 2DHG in III-nitride heterostructures. As shown in Fig.…”

Section: Hole Distributionmentioning

confidence: 99%

First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices

He¹,

Yang²

2022

Chinese Phys. B

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Using first-principles calculations based on density functional theory, we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dimensional hole gas (2DHG) in AlN/GaN superlattices. We show that the increase of in-plane lattice constant would increase the concentration of 2DHG at interfaces and decrease the valence band offset, which may lead to a leak of current. Increasing the thickness of AlN and/or decreasing the thickness of GaN would remarkably strengthen the internal field in GaN layer, resulting in better confinement of 2DHG at AlN/GaN interfaces. Therefore, a moderate larger in-plane lattice constant and thicker AlN layer could improve the concentration and confinement of 2DHG at AlN/GaN interfaces. Our study could serve as a guide to control the properties of 2DHG at III-nitride interfaces and help to optimize the performance of p-type nitride-based devices.

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Section: Hole Distributionmentioning

confidence: 99%

First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices

He¹,

Yang²

2022

Chinese Phys. B

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“…In this section, the eigenvalues for a more realistic SC potential will be compared with the presented LBP model. As an example, it will be considered the SC calculation performed by Qin al [32]. In this work, the authors studied the eigenvalues in a confining potential generated in a GaN based high electron mobility transistor.…”

Section: Comparison With a Sc Calculationmentioning

confidence: 99%

Linear bounded potential model for semiconductor band bending

Villavicencio¹,

Ferreyra²,

Bridoux³

et al. 2022

Semicond. Sci. Technol.

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We propose a simple but unexplored model for the semiconductor band bending with the aim to obtain a relatively simple expression to calculate the energy spectrum for the conﬁned levels and the analytical expressions for wave-functions. This model consists of a linear potential but it is bounded or trimmed in energy unlike the well known wedge potential model. We present exact solutions for this potential in the frame of the eﬀective mass approximation and they are valid for electron or hole conﬁnement potential. This model provides a more adequate physical scenario than the wedge potential since it takes into account the charge balance involved in the band bending potential. These results allow to treat conﬁned potential problems as in the case of a two-dimensional electron gas (2DEG) in a simpliﬁed way. We discuss the application of this approximation to the recombination time of electrons an holes and for the Franz-Keldysh eﬀect.

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“…where we take L = 10 nm-which is a reasonable value for 2DEG quantum well width 24 . Eventually, we have…”

Section: B Wannier Basismentioning

confidence: 99%

Correlation induced $d$-wave pairing in quantum dot square lattice

Biborski,

Nowak,

Zegrodnik

2021

Preprint

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We consider an electrostatically induced square lattice of quantum dots and study the role of electron-electron correlations in the resulting electronic features of the system. We utilize the Wannier functions methodology in order to construct Hamiltonian for interacting fermions and find that the change of the depth of the quantum dot confining potential results in a transition from a moderately-, to strong-correlated regime of the system. We obtain the approximate ground state by means of Variational Monte-Carlo method for a wide range of dopings. The values of microscopic parameters, charge gap as well as spin-and pair-correlation functions obtained in the stronglycorrelated regime signify the presence of antiferromagnetic spin-ordering and the realization of the Mott insulator phase. Moreover, we report on a two dome structure of the emerging d-wave paired state residing on both sides of the half filled case. The obtained results are discussed in view of the well known families of unconventional superconducting materials such as copper based compounds.

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Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect

Cited by 14 publications

References 38 publications

First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices

First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices

Linear bounded potential model for semiconductor band bending

Correlation induced $d$-wave pairing in quantum dot square lattice

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