Modeling of a double-pass backward Er-doped superfluorescent fiber source for fiber-optic gyroscope applications

Wang, L.A.; Su, Chia-Yu

doi:10.1109/50.803024

Cited by 34 publications

(36 citation statements)

References 23 publications

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“…28 Our devices are electrically resistive in their asdeposited state, with no evidence of metallic filament formation. If metal filaments are responsible for the switching and memory effects in our devices, then these must result from the formation process.…”

Section: -8mentioning

confidence: 97%

Electrical behavior of memory devices based on fluorene-containing organic thin films

Dimitrakis

Normand

Tsoukalas

et al. 2008

Journal of Applied Physics

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report on switching and negative differential resistance ͑NDR͒ behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-͕4-͓5-͑4-tert-butylphenyl͒-1,3,4-oxadiazol-2-yl͔phenyl͖-9,9-dihexyl-N , N-diphenyl-fluoren-2-amine. The addition of gold nanoparticles ͑0.5 wt % ͒ did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a "forming" process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole-Frenkel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses.

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Section: -8mentioning

confidence: 97%

Electrical behavior of memory devices based on fluorene-containing organic thin films

Dimitrakis

Normand

Tsoukalas

et al. 2008

Journal of Applied Physics

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“…An analysis of the current-voltage curves of the PMMA:BCP:TCNQ [1:1:0.5 wt%] CT complex device [ Figure 5] suggested that the transition from the highresistance to the low-resistance state took place due to the charge transfer mechanism [29][30][31]. The linear fitting of Ln(I) versus V 1/2 in the OFF state [ Figure 5(a)] and of log I versus log V in the ON state [best fitting of log I-log V are I ∝ V 1.56 during the first bias scan and I ∝ V 1.24 in the third bias scan, Figure 5(b)] indicate that the current (charge transport) was controlled by the direct charge injection from Al to the CT complex (thermionic emission model [35,36]) in the OFF state and by the space-chargelimited current (SCLC) in the ON state [35,37], and not by filament conduction, which results in metallic behavior [14,15] (log I-log V is I ∝ V…”

Section: Resultsmentioning

confidence: 99%

“…Finally, the device did not show current or V th dependence with a change of the active area in the pixel. These results strongly suggest that the conductivity change can be realized by the filament, as formed by defects or dust on the bottom of the substrate [15]. More experiments, such as the current and V th variations according to the film thickness of the CT complex, the temperature, and the timedependence of the conductivity of the device should be carried out to determine the switching mechanism of CT complex devices.…”

Section: 0mentioning

confidence: 99%

“…These conditions include a lower threshold voltage (<5 V), a higher ON/OFF ratio (>orders of 103), a rapid switching time (<100 ns), longer retention (>10 years at 60 o C), higher duration (>106 cycles) and a high memory capacity (>109 bite). Among the several types of organic (polymer) memory devices, such as trapping filling [13], filamentary conduction [14,15], electrochromicity [16], electroreduction and conformation changes of molecules [17,18], organic/metal/organic (O/M/O) structures [19][20][21][22] and charge transfer (CT) complex [23][24][25][26][27][28][29][30][31], last two organic (polymer) memory devices, organic/metal/organic (O/M/ O) structures and charge transfer (CT) complex, are entitled to be used for practical application. Especially, organic (polymer) memory devices based on the CT complex are expected to show fastest switching times (<10 ns), as the switching takes place via a rapid electronic process (redox reaction) rather than a slow process (chemical reaction, a conformational change, or isomerization), as reported in other memory devices.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, considerable attention has been directed toward electrical switching and memory devices which consist of organic materials, polymers and charge transfer complexes with an electrical bistable function [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31]. Memory devices based on organic (polymer) materials have many advantages compared to inorganic memory devices, such as flexibility, simple processing, a low cost, and largearea fabrication via printing technology.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Bistable Characteristics of Organic Charge Transfer Complex for Memory Device Applications

Lee¹

2015

Applied Science and Convergence Technology

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In this work, the electrical bistability of an organic CT complex is demonstrated and the possible switching mechanism is proposed. 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and tetracyanoquinodimethane (TCNQ) are used as an organic donor and acceptor, respectively, and poly-methamethylacrylate (PMMA) is used as a polymeric matrix for spin-coating. A device with the Al/(Al 2 O 3 )/PMMA:BCP:TCNQ[1:1:0.5 wt%]/Al configuration demonstrated bistable and switching characteristics similar to Ovshinsky switching with a low threshold voltage and a high ON/OFF ratio. An analysis of the current-voltage curves of the device suggested that electrical switching took place due to the charge transfer mechanism.

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Comment on “Memory Effect and Negative Differential Resistance by Electrode‐Induced Two‐Dimensional Single‐Electron Tunneling in Molecular and Organic Electronic Devices”

Majumdar

Baral

Laiho³

et al. 2006

Advanced Materials

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In a recent article, Tang et al. [1] proposed a general model explaining the switching and negative differential resistance (NDR) effect observed in a multitude of different molecular and organic thin-film device configurations. Tang et al. argued that switching and NDR are general phenomena originating from nucleation of evaporated-metal nanoislands formed in crevices created in the vicinity of dust particles and/or other impurities on the bottom electrode. If these nanoislands form in a special four-sphere configuration, essentially a 2D ring structure, anomalous current-voltage characteristics are predicted. [2] In order to obtain the correct order of magnitude for the experimentally measured current density, Tang et al. argued that there have to be contributions from 10 4 independent four-ring island arrays arising at the 10 4 dust and/or impurity sites having crevices. We do acknowledge the possibility of metal-island formation in crevices around possible dust particles. However, we do not agree with this being the general solution to switching and NDR observed in many types of materials. We have performed experiments where we have observed that, upon careful evaporation of aluminum with standardized parameters, such as the evaporation rate, the distance of the mask from the electrode, and the pressure during evaporation, the effect of pinholes can be minimized and a polystyrene (PS) film between two aluminum electrodes can act as an insulator. By keeping all the evaporation parameters fixed, we have systematically introduced a small fraction of fullerenes (C60) in the PS matrix (the details of the experimental procedure have been described previously [3] ) and have obtained completely different electrical behaviors. The films made from 1 wt % of C60 in PS were as insulating as the PS-only device (Fig. 1). But, when we made a device from a solution with 5 wt % of C60 in PS, we found switching and NDR in an all-organic active layer, as clearly seen in Figure 1. However, the switching behavior has only a 40 % reproducibility between different devices and is not an additive effect, as it should be if the suggested model were correct.[1] We either observe or do not observe the effect in different cells on the same substrate. We have measured a large set of substrates and, in general, we found that four out of ten of our 5 wt % devices exhibit switching, as has also been reported for the intermediatemetal-based devices.[4]Upon increasing the amount of C60 in the devices further, the switching disappears and only a systematic NDR is observed. The reproducibility of the NDR is 100 % for all the measured devices. We have also observed switching and NDR in devices made without an evaporated top electrode, where we have used solution-cast poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as the top electrode. This further justifies the fact that the observed switching is not only due to the metal inclusion from evaporation.We have tried to find possible proof for four-ring nanoisland arrays in our C...

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Modeling of a double-pass backward Er-doped superfluorescent fiber source for fiber-optic gyroscope applications

Cited by 34 publications

References 23 publications

Electrical behavior of memory devices based on fluorene-containing organic thin films

Electrical behavior of memory devices based on fluorene-containing organic thin films

Electrical Bistable Characteristics of Organic Charge Transfer Complex for Memory Device Applications

Comment on “Memory Effect and Negative Differential Resistance by Electrode‐Induced Two‐Dimensional Single‐Electron Tunneling in Molecular and Organic Electronic Devices”

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