Modeling of a new liner stressor comprising Ge&lt;inf&gt;2&lt;/inf&gt;Sb&lt;inf&gt;2&lt;/inf&gt;Te&lt;inf&gt;5&lt;/inf&gt; (GST): Amorphous-crystalline phase change and stress induced in FinFET channel

Cheng, Ran; Ding, Yinjie; Liu, Bin; Yeo, Yee-Chia

doi:10.1109/isdrs.2011.6135174

Cited by 2 publications

(1 citation statement)

References 2 publications

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“…In addition, the current enhancement is higher for smaller L G , which is attributed to higher strain induced by the c-GST stressor at smaller L G . This trend is consistent with simulation results of FinFETs with SiN and GST liners [31], [32].…”

Section: Fin Definition Gate Stack and Spacer Formation S/d Implant Asupporting

confidence: 91%

Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

Ding

Cheng

Koh

et al. 2013

IEEE Trans. Electron Devices

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A novel Ge 2 Sb 2 Te 5 (GST) liner stressor for enhancing the drive current in p-channel FinFETs (p-FinFETs) is demonstrated. When amorphous GST changes phase to crystalline GST (c-GST), the GST material contracts. This phenomenon is exploited for strain engineering of p-FinFETs. A GST liner stressor wrapping a p-FinFET can be shrunk or contracted to generate very high channel stress for drive current enhancement. Saturation drain current enhancement of ∼80% and linear drain current enhancement of ∼110% are observed for FinFETs with c-GST liner stressor over the control or unstrained FinFETs. The drain current enhancement is higher for 0°rotated FinFETs as compared with that of the FinFETs with 45°rotation, due to the orientation-dependent piezoresistance coefficients. The drain current enhancement increases with decreasing gate length. GST liner stressor could be a strain engineering option in sub-20-nm technology nodes. Index Terms-FinFET, Ge 2 Sb 2 Te 5 (GST), multigate FET, phase change, strain. Yinjie Ding (S'11) received the B.Eng. (Hons.) degree in electrical engineering from the National University of Singapore, Singapore, in 2009, where he is currently pursuing the Ph.D. degree in electrical engineering.He is working on strain engineering for advanced transistors.Ran Cheng (S'11) received the B.Eng. degree in electrical engineering from the National University of Singapore (NUS), Singapore, in 2009. She is currently pursuing the Ph.D. degree at NUS. Shao-Ming Koh (S'07) received the B.Eng. (Hons.) and Ph.D. degrees from the National University of Singapore, Singapore.He is currently with GLOBALFOUNDRIES, Singapore.

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Section: Fin Definition Gate Stack and Spacer Formation S/d Implant Asupporting

confidence: 91%