Modeling of a New SOI Bidirectional Bipolar Junction Transistor for Low-Loss Household Appliances

Phung, Luong Viêt; Benboujema, Chawki; Batut, Nathalie; Quoirin, Jean-Baptiste; Schellmanns, Ambroise; Jaouen, Lionel

doi:10.1109/ted.2011.2108658

Cited by 12 publications

(6 citation statements)

References 4 publications

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“…It is important to notice that the cost and energy conversion efficiency of the proposal topology could also be improved by replacing the K5 and K6 switches by a voltage and current bidirectional switch. An interesting switch called "ISIS" could be implemented [7]. This is a low heat dissipating integrated switch (0.7 W/A) design for houses application.…”

Section: -Level Npc Inverter 5-level Inverter Proposedmentioning

confidence: 99%

Development of a new mixed 5-level inverter for 3 kW household photovoltaic applications

Caldeira¹,

Jacques²,

Schellmanns³

et al. 2024

RE&PQJ

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Multilevel inverters are well used in high power electronic applications (about 10 kW) because of their ability to generate a very good quality of waveforms, reducing switching frequency, and their low voltage stress across the power devices. However, inverter architecture must be modified in order to take into account the different photovoltaic (PV) problems in conventional installation. This paper presents a comparative study of 5-level Neutral Point Clamped (NPC) and a new mixed 5-level inverter. The theoretical study is validated using simulation with the LTspice environment. The output voltage and total harmonic distortion are particularly compared. An experimental 5-level inverter was realized in order to validate analytical results.

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Section: -Level Npc Inverter 5-level Inverter Proposedmentioning

confidence: 99%

Development of a new mixed 5-level inverter for 3 kW household photovoltaic applications

Caldeira¹,

Jacques²,

Schellmanns³

et al. 2024

RE&PQJ

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“…Bipolar junction transistors (BJTs) are widely used in various electronic systems [1][2][3][4][5][6][7] and are mainly responsible for power control, amplification, switching, and other functions. Due to the trends of miniaturization, integration, multifunctionality, and high frequency in electronic systems, the electromagnetic environment has become increasingly complex, resulting in numerous electromagnetic compatibility (EMC) issues.…”

Section: Introductionmentioning

confidence: 99%

“…Bipolar junction transistors (BJTs) are widely used in various electronic systems 1–7 and are mainly responsible for power control, amplification, switching, and other functions. Due to the trends of miniaturization, integration, multifunctionality, and high frequency in electronic systems, the electromagnetic environment has become increasingly complex, resulting in numerous electromagnetic compatibility (EMC) issues 6,8 . In order to accurately analyze the EMC of these electronic systems, it is necessary to establish BJT models that take into account both the functional characteristics and the EMC simulation requirements.…”

Section: Introductionmentioning

confidence: 99%

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Pan,

Zhang,

Ren

et al. 2023

Circuit Theory & Apps

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SummaryBipolar junction transistors (BJTs) are widely used in various electronic systems, and the establishment of the electromagnetic compatibility (EMC) model for BJTs is crucial for EMC analysis of these systems, such as high‐frequency circuits. In this paper, a BJT EMC model that satisfies both functionality and EMC analysis requirements was established based on physical characteristic measurement. First, comprehensive and systematic methods for measurement and extracting SPICE parameters based on physical BJTs are presented, including a proposed curve‐fitting calculation method for extracting barrier capacitance parameters. Second, an analysis of the impact of major BJT electrical characteristics parameters was conducted, leading to the identification of important model parameters affecting BJT functionality and EMC. Finally, the primary BJT model was optimized using the simplex method, and a method for EMC analysis and verification of the BJT model was presented. The experimental and simulation results are in good agreement, and the established model meets the accuracy requirements for both EMC and functionality. Therefore, the proposed method is feasible and suitable for the EMC modeling of BJTs.

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“…The GREMAN laboratory has recently developed a new super-gain BJT (bipolar junction transistor) following the requirements described previously [7]. Compared with standard BJT structures, several physical improvements have been made to obtain a super-gain (higher than 100) and low saturation voltage (lower than 0.3 V) which leads to low consumption in on-state [8].…”

Section: Introduction mentioning

confidence: 99%

Development and Static Mode Characterization of a New Low-Loss AC Switch Based on Super-gain BJT

Ren¹,

Jacques²,

Song³

et al. 2014

JEPE

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This paper deals with an innovative low-loss AC switch, named as TBBS (transistor based bidirectional switch), based on the association of super-gain BJTs developed by the GREMAN laboratory. The main characterization results of the super-gain BJT are reminded to identify the key parameters that are essential to build the TBBS. A complete characterization database in static mode of this new AC switch is discussed. In particular, its forward and reverse-biased features have been measured to see the evolution of the DC current gain as a function of the current density. The TBBS makes sense when using the super-gain BJT (bipolar junction transistor) in reverse mode. It means that the reverse DC current gain has to be sufficient (at least higher than 1 compared with the conventional BJT one). This new AC switch is bidirectional in current and voltage, totally controllable (turn-on and turn-off) and the most attractive solution in terms of on-state power losses. Further, its manufacturing process is as easier as existing device such as triac.

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Modeling of a New SOI Bidirectional Bipolar Junction Transistor for Low-Loss Household Appliances

Cited by 12 publications

References 4 publications

Development of a new mixed 5-level inverter for 3 kW household photovoltaic applications

Development of a new mixed 5-level inverter for 3 kW household photovoltaic applications

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Development and Static Mode Characterization of a New Low-Loss AC Switch Based on Super-gain BJT

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