2011
DOI: 10.15676/ijeei.2011.3.2.9
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Modeling of a Second Order Sigma-Delta Modulator with Imperfections

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Cited by 5 publications
(5 citation statements)
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“…(2) Where gmi and roi are respectively the transconductance of Mi transistor for i = (4, 5, 10) and the drain-source resistance of Mi device for i = (1,4,5,7,9,10). As a result, the open loop gain of the Regulated Telescopic OTA circuit is expressed as:…”
Section: Regulated Telescopic Ota Optimizationmentioning
confidence: 99%
See 1 more Smart Citation
“…(2) Where gmi and roi are respectively the transconductance of Mi transistor for i = (4, 5, 10) and the drain-source resistance of Mi device for i = (1,4,5,7,9,10). As a result, the open loop gain of the Regulated Telescopic OTA circuit is expressed as:…”
Section: Regulated Telescopic Ota Optimizationmentioning
confidence: 99%
“…The growing demand for high-speed and high-precision analog integrated circuits dictates stringent design specifications for the amplifiers which are the basic building blocks for numerous applications. In fact, high performance analog-to-digital converters (ADCs) require OTA circuit with very high DC gain and gain-bandwidth product (GBW), to meet both accuracy and fast settling requirements of the systems [1]. In addition, high-gain amplifiers use cascode structures or multi-stage designs with long channel length transistors biased at low current levels, while, high-bandwidth amplifiers use single-stage designs with short channel length transistors biased at high current levels [2].…”
Section: Introductionmentioning
confidence: 99%
“…The behaviour of higher order multibit Σ∆-converters with imperfections can be modelled based on the work of Dendouga [5] and Koe [6]. As shown by Koe [6], the clock jitter, the switchedcapacitor kT/C-noise, the amplifier thermal noise and the amplifier DC gain have an influence on the signal to noise ratio (SNR).…”
Section: Data Acquisitionmentioning
confidence: 99%
“…The equations (3) and (4) show that if we wishes to reduce the thermal noise power, then we must increase the value of the sampling capacity Cs [7]. Thus the total noise can be evaluated by the following equation:…”
Section: A Switches Thermal Noisementioning
confidence: 99%
“…For a MOS transistor in saturation, the voltage generator noise equivalent to the two sources is given by [7]: ≈ 2…”
Section: B Operational Amplifier Noisementioning
confidence: 99%