Modeling of Built-In Potential Variations of Cylindrical Surrounding Gate (CSG) MOSFETs

Gupta, Santosh Kumar

doi:10.5121/vlsic.2012.3506

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Cited by 2 publications

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Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects

Gupta

Baishya

2013

J. Semicond.

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A physically based analytical model for surface potential and threshold voltage including the fringing gate capacitances in cylindrical surround gate (CSG) MOSFETs has been developed. Based on this a subthreshold drain current model has also been derived. This model first computes the charge induced in the drain/source region due to the fringing capacitances and considers an effective charge distribution in the cylindrically extended source/drain region for the development of a simple and compact model. The fringing gate capacitances taken into account are outer fringe capacitance, inner fringe capacitance, overlap capacitance, and sidewall capacitance. The model has been verified with the data extracted from 3D TCAD simulations of CSG MOSFETs and was found to be working satisfactorily.

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Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects

Gupta

Baishya

2013

J. Semicond.

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Analysis of Electrical field in Uniformly doped Cylindrical Surrounding Double-Gate MOSFET

Dargar

Srivastava

2019

2019 10th International Conference on Computing, Communication and Networking Technologies (ICCCNT)

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Modeling of Built-In Potential Variations of Cylindrical Surrounding Gate (CSG) MOSFETs

Abstract: ABSTRACT

Cited by 2 publications

References 3 publications

Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects

Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects

Analysis of Electrical field in Uniformly doped Cylindrical Surrounding Double-Gate MOSFET

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