Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors

Valletta, A.; Rapisarda, M.; Calvi, Sabrina; Fortunato, G.; Jacob, S.; Fischer, V.; Benwadih, M.; Bablet, J.; Chartier, Isabelle; Coppard, R.; Mariucci, L.

doi:10.1109/ted.2014.2364451

Cited by 14 publications

(14 citation statements)

References 15 publications

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“…We calculated such factors using a formula proposed by Elmasry, [68] yielding α f,gs = 12.4% and α f,gd = 21.1%, which is in perfect agreement with our measured data. This effect has already been explained for structures of this kind, [69] and originates from the fact that the semiconductor layer is not patterned, covering the whole substrate. This effect has already been explained for structures of this kind, [69] and originates from the fact that the semiconductor layer is not patterned, covering the whole substrate.…”

Section: Resultsmentioning

confidence: 88%

“…In the case of C gd , the measured values are correctly constant at ≈0.8 pF up to a bias voltage of 5 V, while C gs exhibits a slightly increasing trend with the bias voltage, which we attribute to parasitic accumulation of additional charge outside the channel active area. This effect has already been explained for structures of this kind, and originates from the fact that the semiconductor layer is not patterned, covering the whole substrate. At bias voltages >5 V, the higher electric fields are producing a further increase in capacitance and a relatively small deviation from the predicted values.…”

Section: Resultsmentioning

confidence: 92%

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Accessing MHz Operation at 2 V with Field‐Effect Transistors Based on Printed Polymers on Plastic

Perinot

Caironi

2018

Advanced Science

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Organic printed electronics are suitable for the development of wearable, lightweight, distributed applications in combination with cost‐effective production processes. Nonetheless, some necessary features for several envisioned disruptive mass‐produced products are still lacking: among these radio‐frequency (RF) communication capability, which requires high operational speed combined with low supply voltage in electronic devices processed on cheap plastic foils. Here, it is demonstrated that high‐frequency, low‐voltage, polymer field‐effect transistors can be fabricated on plastic with the sole use of a combination of scalable printing and digital laser‐based techniques. These devices reach an operational frequency in excess of 1 MHz at the challengingly low bias voltage of 2 V, and exceed 14 MHz operation at 7 V. In addition, when integrated into a rectifying circuit, they can provide a DC voltage at an input frequency of 13.56 MHz, opening the way for the implementation of RF devices and tags with cost‐effective production processes.

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Section: Resultsmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 92%

Accessing MHz Operation at 2 V with Field‐Effect Transistors Based on Printed Polymers on Plastic

Perinot

Caironi

2018

Advanced Science

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“…The larger Δn calculated from C−V measurements is not surprising as parasitic capacitance in the thin film transistor configuration will increase the measured capacitance. 61 Finally, Na 2 Se surface treatment of CuInSe 2 NC films introduces the largest degree of fusion and excess surface Se 2− for In-dopant binding, yielding the largest In:Cu ratio of 1.07 ± 0.10:1 (Figure 4B). This treatment produces the best performing CuInSe 2 NC FETs with the highest μ e = 10.5 ± 2.4 cm 2 /(V s) and the lowest V T = 19.1 ± 1.8 V. The additional electron concentration, compared to that for samples without surface chalcogen treatment, increases to 1.36 × 10 18 electrons/cm 3 , as calculated from V T (Figure 4C) and 6.0 × 10 18 electrons/cm 3 , as calculated by C−V measurement (Supporting Information Figure S8B).…”

Section: Resultsmentioning

confidence: 99%

Air-Stable CuInSe₂ Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange

et al. 2019

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Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. We fabricate high mobility CuInSe2 NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu+ is substituted for Cd2+ transforming CdSe NCs to Cu-rich Cu2Se NC films. Next, Cu2Se NC films are dipped into a Na2Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu2Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine–indium chloride (TOP–InCl3) is used as a source of In3+ to partially exchange and n-dope CuInSe2 NC films. We demonstrate Al2O3-encapsulated, air-stable CuInSe2 NC FETs with linear (saturation) electron mobilities of 8.2 ± 1.8 cm2/(V s) (10.5 ± 2.4 cm2/(V s)) and with current modulation of 105, comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe2 NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits.

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“…[15][16][17][18][19] However, the influence of the overlap region on the OFET characteristics has not been explicitly investigated. [15][16][17][18][19] It is therefore important to investigate the influences of both overlap and peripheral regions on the ac characteristics of OFETs. However, the influences of both peripheral and overlap regions on the complex impedance of OFETs have not been quantitatively investigated.…”

mentioning

confidence: 99%

Interpretation of the modulus spectra of organic field-effect transistors with electrode overlap and peripheral regions: determination of the electronic properties of the gate insulator and organic semiconductor

Suenaga

Higashinakaya

Nagase

et al. 2020

Jpn. J. Appl. Phys.

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The modulus spectra of organic field-effect transistors (OFETs) with electrode overlap and peripheral regions have been experimentally and theoretically investigated. The complex impedance of regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) OFETs with electrode overlap and peripheral regions was measured with a frequency response analyzer. The complex modulus was derived from an equivalent circuit of OFETs with overlap and peripheral regions using a four-terminal matrix approach. The modulus spectra of the P3HT OFETs were successfully fitted by those calculated using the expression derived from the equivalent circuit. Three structures were found in the modulus spectra of the P3HT OFETs owing to the dielectric properties of the gate insulator, transport properties of the organic semiconductor, and contact resistance from the low to high frequency ranges. The resistivity of the gate insulators and the field-effect mobility of working OFETs were determined using the values of the circuit components of the equivalent circuit obtained by fitting. I. INTRODUCTIONOrganic field-effect transistors (OFETs) are currently attracting a great deal of attention as next-generation electronic devices because they can be fabricated by a printing process on flexible large-area substrates with low cost. [1][2][3] The device performance of OFETs, which has been usually investigated by analysis of the transfer and output characteristics of OFETs, 4,5 is closely related to the device structures. For instance, a staggered configuration of OFETs has often been used. [6][7][8][9][10] In this configuration, a certain overlap region between the source and the gate electrodes is essential to reduce the contact resistance, which is caused by the strong electric field formed between the source and the gate electrodes. 5 However, excessive electrode overlap regions can act as parasitic capacitance, and thereby the cut-off frequency of OFETs decreases with increasing area of the electrode overlap region.

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Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors

Cited by 14 publications

References 15 publications

Accessing MHz Operation at 2 V with Field‐Effect Transistors Based on Printed Polymers on Plastic

Accessing MHz Operation at 2 V with Field‐Effect Transistors Based on Printed Polymers on Plastic

Air-Stable CuInSe₂ Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange

Interpretation of the modulus spectra of organic field-effect transistors with electrode overlap and peripheral regions: determination of the electronic properties of the gate insulator and organic semiconductor

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Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors

Cited by 14 publications

References 15 publications

Accessing MHz Operation at 2 V with Field‐Effect Transistors Based on Printed Polymers on Plastic

Accessing MHz Operation at 2 V with Field‐Effect Transistors Based on Printed Polymers on Plastic

Air-Stable CuInSe2 Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange

Interpretation of the modulus spectra of organic field-effect transistors with electrode overlap and peripheral regions: determination of the electronic properties of the gate insulator and organic semiconductor

Contact Info

Product

Resources

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Air-Stable CuInSe₂ Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange