Modeling of Cu gettering in p- and n-type silicon and in poly-silicon

Hoelzl, R.; Range, K.‐J.; Fabry, L.

doi:10.1007/s003390101021

Cited by 23 publications

(30 citation statements)

References 4 publications

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“…AIP Advances 8, 015112 (2018) proposed by Hoezl et al 29 In the temperature range between 700 • C and 800 • C, the Cu diffusivity is maximum but k seg ≈ 4, indicating that weak impurity segregation takes place during the isothermal anneal at 800 • C and the initial phase of the cooling ramp. When temperature approaches 600 • C, the Cu diffusivity remains close to its maximum value, while k seg ≈ 400 due to the drastic decrease in bulk Cu solubility.…”

Section: -6mentioning

confidence: 98%

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

et al. 2018

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The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects.

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Section: -6mentioning

confidence: 98%

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

et al. 2018

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“…Ni is also easily gettered both by oxygen-related defects and by boron high doping (see for instance 30,31 ). A specific experiment was carried out to test the gettering ability of bulk defect and of high boron concentration regions.…”

Section: Contaminantmentioning

confidence: 99%

Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors

Russo¹,

Nardone²,

Polignano

et al. 2017

ECS J. Solid State Sci. Technol.

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We have investigated the effects of deliberate heavy metals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted directly in 3 Mega array pixels the following metals: Cr, V, Cu, Ni, Fe, Ti, Mo, W, Al and Zn. Analyzing the dark current "spectrum" as obtained for fixed integration periods of time by means of standard image-testing equipment, these impurities can be identified and detected with a sensitivity of ∼ 10 9 traps/cm 3 or higher.

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“…Metal impurities such as copper, iron, and nickel in silicon wafers have a detrimental impact on the performance and yield of semiconductor devices. Therefore, various studies have been conducted on gettering techniques to remove metal impurities from the active region of devices, and gettering techniques using oxide precipitates, [1][2][3][4][5][6][7][8][9] polysilicon back seal (PBS), [5,10,11] ion implantation, [12][13][14] and shallow dopants in silicon [15][16][17][18][19][20] have been developed over the past few decades. In general, gettering mechanisms are divided into two types, relaxation gettering [2,21] and segregation gettering.…”

Section: Introductionmentioning

confidence: 99%

“…[15][16][17][18][19] For example, copper and iron are strongly gettered in heavily boron-doped wafers. [15,18,19] However, studies on the gettering effect of n-type doping are fewer than those on the effect of boron doping. In general, n-type silicon wafers doped with phosphorus, arsenic, or antimony are used for power devices such as insulated gate bipolar transistors (IGBTs) and metal oxide semiconductor field-effect transistors (MOSFETs), which have recently made rapid progress in terms of capacity enlargement and the reduction of transmission loss.…”

Section: Introductionmentioning

confidence: 99%

Gettering Mechanism of Copper in n‐Type Silicon Wafers

Ozaki

Torigoe

Mizuno

et al. 2019

Physica Status Solidi (a)

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The dependence of the gettering efficiency for copper impurity in n‐type silicon wafers on the concentration of a dopant such as phosphorus, arsenic, or antimony is investigated by chemical analysis of the copper concentration and the observation of copper precipitates. It is found that the gettering efficiency decreases gradually with increasing dopant concentration in the range of 1014–1019 cm−3 and increases rapidly at concentrations higher than 1019 cm−3. Copper precipitates are observed in the bulk of silicon wafers doped with phosphorus in the concentration range of 1014–1019 cm−3, suggesting that the relaxation gettering of copper occurs. In contrast, no copper precipitates are observed at concentrations above 1019 cm−3. It is suggested that segregation gettering occurs as a result of the pairing reaction between copper and heavily doped phosphorus. It is concluded that the gettering mechanism of copper in n‐type silicon wafers changes from relaxation gettering to segregation gettering with increasing dopant concentration.

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Modeling of Cu gettering in p- and n-type silicon and in poly-silicon

Cited by 23 publications

References 4 publications

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors

Gettering Mechanism of Copper in n‐Type Silicon Wafers

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