1982
DOI: 10.1063/1.330123
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Modeling of cw laser annealing of multilayer structures

Abstract: Careful computer modeling can accurately represent the temperature distribution created during laser annealing. In this way a better understanding of the physical processes that contribute to thin film crystallization is achieved, and precise predictions of the effects of various sample geometries on laser annealing are possible. Models of cw laser annealing have always assumed a single homogeneous medium, but practical structures usually consist of several layers of semiconductors, insulators and metals of wi… Show more

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Cited by 65 publications
(17 citation statements)
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“…Following the procedure adopted by Calder , Eqs. and are solved for the temperature rise ΔT1(r,z): ΔT1(r,z)=Pwα2(1R)πk10expλ24J0λrw2((αw)2λ2)leftA(λ)+B(λ)C(λ)leftD(λ)dλ,where A(λ)=(k1/k2)coshλ(z1z)/w+sinhλ(z1z)/w,B(λ)=λ/αwk1/k2exp(αz1)coshλz/w,C(λ)=coshλz1/w+…”
Section: Theorymentioning
confidence: 99%
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“…Following the procedure adopted by Calder , Eqs. and are solved for the temperature rise ΔT1(r,z): ΔT1(r,z)=Pwα2(1R)πk10expλ24J0λrw2((αw)2λ2)leftA(λ)+B(λ)C(λ)leftD(λ)dλ,where A(λ)=(k1/k2)coshλ(z1z)/w+sinhλ(z1z)/w,B(λ)=λ/αwk1/k2exp(αz1)coshλz/w,C(λ)=coshλz1/w+…”
Section: Theorymentioning
confidence: 99%
“…In the above equation ΔT1(r,z)=T1(r,z)T, T is the ambient temperature and λ is the variable of integration. Readers are referred to the work of Lax and Calder for more details on derivation of Eq. .…”
Section: Theorymentioning
confidence: 99%
“…Com a sofisticado crescente de diversas áreas científicas e tecnológicas, há a necessidade de um estudo detalhado de como a radiagáo láser interage com materiais estratificados. Necessidade que fica evidente ao analisarmos os diversos casos que existem na literatura científica de amostras de varias carnadas de materiais que sao irradiados com láser como por exemplo: discos de gravagáo ótica (1-3) que possuem quatro carnadas, (substrato, carnada absorvedora do láser, carnada de gravagáo, carnada protetora); aquecimento e fusáo de filmes finos sobre substratos isolantes (4); implantado de ions e impurezas sobre semicondutores (5); crescimento de cristais (5,6); recozimento de semicondutores (*) Dep. Ciencia Física, Univ.…”
Section: Introdujounclassified
“…The examples are the doping of plane surfaces or the deposition of homogeneous films. In such cases analytical and numerical solutions [5][6][7][8][9] can be applied, some of them include multilayer structures, 10 different shapes of the energy beam, 11 temperature dependent material parameters, melting, etc.…”
Section: Introductionmentioning
confidence: 99%