Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon

Posselt, M.; Schmidt, Bruno E.; Murthy, C. S.; Feudel, Thomas; Suzuki, Kunihiro

doi:10.1149/1.1837618

Cited by 64 publications

(14 citation statements)

References 6 publications

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“…This model is well tractable and serves as the basis for a large number of algorithms which have been developed (see Refs. [6][7][8] for the most widely used).…”

Section: Introductionmentioning

confidence: 99%

Shower approach in the simulation of ion scattering from solids

et al. 2011

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An efficient approach for the simulation of ion scattering from solids is proposed. For every encountered atom, we take multiple samples of its thermal displacements among those which result in scattering with high probability to finally reach the detector. As a result, the detector is illuminated by intensive "showers," where each event of detection must be weighted according to the actual probability of the atom displacement. The computational cost of such simulation is orders of magnitude lower than in the direct approach, and a comprehensive analysis of multiple and plural scattering effects becomes possible. We use this method for two purposes. First, the accuracy of the approximate approaches, developed mainly for ion-beam structural analysis, is verified. Second, the possibility to reproduce a wide class of experimental conditions is used to analyze some basic features of ion-solid collisions: the role of double violent collisions in low-energy ion scattering; the origin of the "surface peak" in scattering from amorphous samples; the low-energy tail in the energy spectra of scattered medium-energy ions due to plural scattering; and the degradation of blocking patterns in two-dimensional angular distributions with increasing depth of scattering. As an example of simulation for ions of MeV energies, we verify the time reversibility for channeling and blocking of 1-MeV protons in a W crystal. The possibilities of analysis that our approach offers may be very useful for various applications, in particular, for structural analysis with atomic resolution.

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“…This model is well tractable and serves as the basis for a large number of algorithms which have been developed (see Refs. [6][7][8] for the most widely used).…”

Section: Introductionmentioning

confidence: 99%

Shower approach in the simulation of ion scattering from solids

et al. 2011

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“…This quantity can be converted to dpa units multiplying by C a ×10 8 and by the ion dose (ions/cm 2 ) and dividing by the atomic density of Si (N Si = 5×10 22 /cm 3 ). Note, SRIM vacancy distributions were corrected with a defect accumulation (defect endurance) factor [11] of C a = 0.1 that has been determined from Crystal-TRIM simulations of implantation into Si with relatively low-mass boron ions [10]. In literature we did not find specific defect endurance parameter for proton implantation, therefore the C a value of the light boron projectile was applied.…”

Section: A Computer Simulation Of Damage Distributionmentioning

confidence: 99%

Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements

Szívós

Balogh

Rajta

et al. 2022

IEEE J. Electron Devices Soc.

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High-energy low-mass proton implantation achieved considerable interest in semiconductor technology, due to much deeper penetration of hydrogen ions into silicon as compared to common dopants, boron, phosphorous, and arsenic. Accordingly, monitoring the accumulation kinetics and stability of proton-implantation induced defects and their influence on the optical and electrical properties of Si achieved increased attention both in technological process control and scientific research. We show that photo-modulated-reflectance (PMR) is effective technique to measure very low defect concentrations in the ppb-ppm range in high energy proton implanted silicon. After ion irradiation, the as-implanted dilute damage structure may lead to long term changes of the defect distribution and the formation of defect compounds due to mobility of point defects at room temperature. Moreover, low-mass hydrogen atoms may move significantly faster at room temperature compared to heavier dopants. We show that PMR is capable to detect differences in implanted proton dose with high sensitivity in a wide dose range, and, on a longer time scale, allows to follow changes in free carrier generation and recombination processes through the measurement of the long term decay of the PMR signal which is related to the sample response based on electrooptic and thermo-optic effects. Our experiments may pave the way toward high precision process control of device structure fabrication which utilizes the high-energy hydrogen implantation step. Also, our aim is to gain insight into the main processes underlying the dose dependent change and long-term decay of the PMR signal in high energy proton implanted Si.

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“…Moreover, it is worthy to note that the typical estimated projection range (R p ) is within approximately 10% between a silicon substrate and an amorphous SiO 2 layer usually formed on the Si substrate during manufacturing processes. 34,41 Therefore, parameters are deterministically characterized for a process under consideration. Details are described elsewhere.…”

Section: B Comparison Between Model and Experimentsmentioning

confidence: 99%

Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices

Eriguchi

Takao

Ono

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A comprehensive model predicting the effects of plasma-induced damage (PID) on parameter variations in advanced metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. The model focuses on the silicon recess structure (Si loss) in the source/drain extension region formed by high-energy ion bombardment during plasma etching. The model includes the following mechanisms: (1) damaged layer formation by ion impact and penetration, (2) Si recess structure formation by a subsequent wet etch, (3) MOSFET performance degradation, and (4) MOSFET parameter variation. Based on a range theory for plasma-etch damage, the thickness of the damaged layer exhibits a power-law dependence on the energy of the ion incident on the surface of Si substrate. Assuming that the damaged layer was formed during a gate or an offset spacer etch process, the depth of Si recess (d R ) is a function of the depth profile of the created defect site (n dam ), the wet-etch stripping time (t w ), and the energy of the incident ion. It was found that d R also showed a power-law dependence on the average ion energy E ion estimated from applied self-dc-bias voltage for various t w . As for MOSFET performance degradation, the threshold voltage (V th ) shifted and the shift (DV th ) increased with an increase in E ion and a decrease in gate length. This induces an increase in subthreshold leakage current (I off ) for MOSFET. Technology computer-aided-design simulations were performed to confirm these results. By integrating the presented PID models, parameter variations could be predicted: Using a Monte Carlo method, it was demonstrated that PID increases parameter variations such as V th and I off . It also was found that the variation in E ion induces V th and I off variations, comparable to that induced by other process parameter fluctuations such as dopant fluctuation and gate length. In summary, considering the effects of PID on parameter variations is vital for designing future ultralarge-scale-integrated circuits with billions of built-in MOSFETs.

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Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon

Cited by 64 publications

References 6 publications

Shower approach in the simulation of ion scattering from solids

Shower approach in the simulation of ion scattering from solids

Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements

Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices

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