Modeling of diffusion mechanism of conductive channel oxidation in a Pt/NiO/Pt memory switching structure

Sysun, V. I.; Bute, Irina; Борисков, П. П.

doi:10.1016/j.sse.2016.05.019

Cited by 1 publication

(4 citation statements)

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“…This process is random and hence gives wide variation in high resistance states (HRS, OFF‐state) and low resistance states (LRS, ON‐state). The CF bridges the contacts and is formed by the collection of vacancies at structural defects when voltage is applied (LRS), and joule heating leads to the rupturing of the CF in the high resistance state (HRS) 98,181 . For uniform LRS and HRS, as well as other properties, control over the vacancy density, and therefore the conductivity of the oxide, is critical.…”

Section: Nickel Oxide Thin Films In Devicesmentioning

confidence: 99%

“…The switching of NiO x is typically considered to be unipolar, that is, the same voltage polarity is used for both SET and RESET, 98,181 with the switching characteristics being independent of the electrode size in submicron devices, 185 but bipolar switching has also been demonstrated 73,152 . The type of switching has been shown to be dependent on the electrode materials used.…”

Section: Nickel Oxide Thin Films In Devicesmentioning

confidence: 99%

“…The CF bridges the contacts and is formed by the collection of vacancies at structural defects when voltage is applied (LRS), and joule heating leads to the rupturing of the CF in the high resistance state (HRS). 98,181 For uniform LRS and HRS, as well as other properties, control over the vacancy density, and therefore the conductivity of the oxide, is critical. Other mechanisms involve tuning the Schottky barrier height, as well as charge-trapping processes which are highly dependent on defect concentration.…”

Section: Nickel Oxide Thin Films In Devicesmentioning

confidence: 99%

“…183 They observed that the electronic density of the films grown by ALD was closer to the bulk values, and that the films grew on substrates with sharp and welldefined interfaces, making the technique attractive for future CMOS integration. 183 The devices with corresponding 25 to 30 nm ALD NiO x films had HRS of 10 6 to 10 8 Ω cm and LRS of 10 2 to 10 4 Ω cm after forming at 5 to 8 V. 184 T A B L E 4 (Continued) The switching of NiO x is typically considered to be unipolar, that is, the same voltage polarity is used for both SET and RESET, 98,181 with the switching characteristics being independent of the electrode size in submicron devices, 185 but bipolar switching has also been demonstrated. 73,152 The type of switching has been shown to be dependent on the electrode materials used.…”

Section: Nickel Oxide Thin Films In Devicesmentioning

confidence: 99%

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Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

Napari

Huq

Hoye

et al. 2020

InfoMat

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Nickel oxide (NiOx), a p‐type oxide semiconductor, has gained significant attention due to its versatile and tunable properties. It has become one of the critical materials in wide range of electronics applications, including resistive switching random access memory devices and highly sensitive and selective sensor applications. In addition, the wide band gap and high work function, coupled with the low electron affinity, have made NiOx widely used in emerging optoelectronics and p‐n heterojunctions. The properties of NiOx thin films depend strongly on the deposition method and conditions. Efficient implementation of NiOx in next‐generation devices will require controllable growth and processing methods that can tailor the morphological and electronic properties of the material, but which are also compatible with flexible substrates. In this review, we link together the fundamental properties of NiOx with the chemical processing methods that have been developed to grow the material as thin films, and with its application in electronic devices. We focus solely on thin films, rather than NiOx incorporated with one‐dimensional or two‐dimensional materials. This review starts by discussing how the p‐type nature of NiOx arises and how its stoichiometry affects its electronic and magnetic properties. We discuss the chemical deposition techniques for growing NiOx thin films, including chemical vapor deposition, atomic layer deposition, and a selection of solution processing approaches, and present examples of recent progress made in the implementation of NiOx thin films in devices, both on rigid and flexible substrates. Furthermore, we discuss the remaining challenges and limitations in the deposition of device‐quality NiOx thin films with chemical growth methods.

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Section: Nickel Oxide Thin Films In Devicesmentioning

confidence: 99%