Modeling of ferroelectric domains in thin films and superlattices

Guerville, F. De; Luk’yanchuk, I.; Lahoche, L.; Marssi, M. El

doi:10.1016/j.mseb.2005.02.039

Cited by 57 publications

(72 citation statements)

References 5 publications

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“…This equation is also useful in that it can be used in reverse in order to estimate the domain wall thickness of any ferroic with well-defined boundary conditions (Catalan et al, 2007a). Indirect versions of it have been calculated for the specific case of ferroelectrics (Lines and Glass, 2004;De Guerville et al, 2005), but in fact Eq. (2) is independent of the type of ferroic and allows comparisons between different material classes.…”

Section: Wall Thickness and Universality Of Kittel's Lawmentioning

confidence: 99%

“…From Kittel, 1946. that G is the same for all the different ferroics. The value of G has been calculated (De Guerville et al, 2005;Catalan et al, 2007a) 1 as…”

Section: Wall Thickness and Universality Of Kittel's Lawmentioning

confidence: 99%

“…1). The proportionality constant is material dependent and not easily evaluated, and this was simplified by the group of Luk'yanchuk (De Guerville et al, 2005) and by some of us (Catalan et al, 2007a): By dividing the Landau-LifshitzKittel formula by the domain wall thickness , a dimensionless constant results [Eq. (2)].…”

Section: Application Of Kittel's Law To Electro-optic Domain Engineeringmentioning

confidence: 99%

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Domain wall nanoelectronics

et al. 2012

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Domains in ferroelectrics were considered to be well understood by the middle of the last century: They were generally rectilinear, and their walls were Ising-like. Their simplicity stood in stark contrast to the more complex Bloch walls or Néel walls in magnets. Only within the past decade and with the introduction of atomic-resolution studies via transmission electron microscopy, electron holography, and atomic force microscopy with polarization sensitivity has their real complexity been revealed. Additional phenomena appear in recent studies, especially of magnetoelectric materials, where functional properties inside domain walls are being directly measured. In this paper these studies are reviewed, focusing attention on ferroelectrics and multiferroics but making comparisons where possible with magnetic domains and domain walls. An important part of this review will concern device applications, with the spotlight on a new paradigm of ferroic devices where the domain walls, rather than the domains, are the active element. Here magnetic wall microelectronics is already in full swing, owing largely to the work of Cowburn and of Parkin and their colleagues. These devices exploit the high domain wall mobilities in magnets and their resulting high velocities, which can be supersonic, as shown by Kreines' and co-workers 30 years ago. By comparison, nanoelectronic devices employing ferroelectric domain walls often have slower domain wall speeds, but may exploit their smaller size as well as their different functional properties. These include domain wall conductivity (metallic or even superconducting in bulk insulating or semiconducting oxides) and the fact that domain walls can be ferromagnetic while the surrounding domains are not.

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Section: Wall Thickness and Universality Of Kittel's Lawmentioning

confidence: 99%

“…From Kittel, 1946. that G is the same for all the different ferroics. The value of G has been calculated (De Guerville et al, 2005;Catalan et al, 2007a) 1 as…”

Section: Wall Thickness and Universality Of Kittel's Lawmentioning

confidence: 99%

Section: Application Of Kittel's Law To Electro-optic Domain Engineeringmentioning

confidence: 99%

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Domain wall nanoelectronics

et al. 2012

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“…[13] have been directly observed recently in PbTiO 3 /SrTiO 3 superlattices [14], although non uniform domain morphologies were first studied using an electrostatic model in Ref. [15]. The vortex-to-polarization phase transition in Pb(ZrTi)O 3 nanoparticles [16] was first predicted on the basis of abinitio calculations.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Energy Storage with Polar Vortices in Ferroelectric Nanocomposites

et al. 2017

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Nanocomposites of ferroelectric ceramic filler and polymer matrix show considerable promise as high energy storage dielectric capacitors. However, the influence of microstructure of the ferroelectric filler on the electric energy storage performance in the nanocomposite has not been quantitatively studied, yet it is a key element in understanding the methods employed to improve the performance of capacitors. We demonstrate an innovative strategy to enhance the energy storage density with topological vortex structures in nanocomposites. Using three dimensional phase field calculations, we show that multi-vortex structures can exist in ferroelectric nanowires without charge defects or free charges at the interface between the filler and matrix. The switching behavior of the topological structure (vortex and anti-vortex pair) under external electric field is calculated in nanocylinder wires. The small remnant polarization and very narrow hysteresis loop due to the vortex structure in the nanocomposites can lead to a large enhancement of energy density, as high as 5 J/cm 3 compared to 1-2 J/cm 3 for commercial capacitors, and high energy storage efficiency (over 95%) at a relatively low electric field of 140 MV/m.

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“…Given the strong temperature dependence of many of the other properties of ferroelectrics that display first-order phase transitions, [17][18][19] it is perhaps somewhat surprising that domain periodicity is thought to be strongly temperature insensitive; recent LandauGinzburg-Devonshire modeling of 180 • domains in uniaxial ferroelectrics clearly illustrates this point. 20,21 Experimentally, too, this notion is often borne out by direct observation. 22 For example, Kalinin and Bonnell found the period of 90 • domains in BaTiO 3 to be invariant right up to the point where domain contrast simply disappeared as a result of heating through the Curie temperature (T C ).…”

Section: Introductionmentioning

confidence: 99%