Modeling of GaN-Based Normally-Off FinFET

Yadav, Chandan; Kushwaha, Pragya; Khandelwal, Sourabh; Duarte, Juan Pablo; Chauhan, Yogesh Singh; Hu, Chenming

doi:10.1109/led.2014.2314700

Cited by 41 publications

(20 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the following, the nanowire channel height H NC is set as a constant value, indicating that α is a constant. In addition, with the decrease of nanowire channel width, the piezoelectric polarization effect of nanowire channel will be weakened, which results in lower 2DEG concentration . So the impact of the polarization effect cannot be ignored.…”

Section: Simulation and Modelingmentioning

confidence: 99%

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Zhai

et al. 2016

Physica Status Solidi (a)

View full text Add to dashboard Cite

A new simple model of threshold voltage for AlGaN/GaN nanowire channel high electron mobility transistors (NC‐HEMTs) is built in this work. Firstly, four NC‐HEMTs with different nanowire channel width are fabricated, and the conventional HEMT is produced for comparison. With the nanowire channel width decreasing, the threshold voltage of NC‐HEMTs moves positively. Then, the dependence of electron concentration on the nanowire channel width is studied by Silvaco simulation software. With the nanowire channel width decreasing, the electron concentration reduces. Finally, we recognize the threshold voltage model of conventional HEMT for NC‐HEMT modeling, and the new model of threshold voltage of NC‐HEMT is obtained. This model can explain the dependence of electron concentration on nanowire channel width. The depletion region width formed by side gate is about 37 nm which is obtained by the equation of the new model.

show abstract

Section: Simulation and Modelingmentioning

confidence: 99%

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Zhai

et al. 2016

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Where, R sh r and R sh p are the equivalent sheet resistances of the recessed and top planar regions, respectively. We assumed an equivalent sheet resistance for the sidewall and bottom parts (R sh trench ) to simplify the model [25]- [27]. The sh r and R sh p were obtained by averaging 7 separate planar and recessed gated halls, respectively, resulting in R sh p and R sh r of 269 ± 7 Ω/sq and 1713 ± 92 Ω/sq (at VG = 7 V).…”

Section: Resultsmentioning

confidence: 99%

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Zhu

Nela

et al. 2019

IEEE Electron Device Lett.

View full text Add to dashboard Cite

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH), while maintaining a low specific on resistance (RON,SP) and high current density (I D). The tri-gate structure offered excellent channel control, enhancing the VTH from +0.3 V for the recessed to +1.4 V for the recessed tri-gate, along with a much reduced hysteresis in VTH, and a significantly increased transconductance (gm). Additional conduction channels at the sidewalls of the tri-gate trenches compensated the degradation in ON resistance (RON) from the gate recess, resulting in a small RON of 7.32 ± 0.26 Ω•mm for LGD of 15 μm, and an increase in the maximum output current (I D max). In addition, the tri-gate inherently integrates a gateconnected field-plate (FP), which improved the breakdown voltage (VBR) and reduced the degradation in dynamic RON. With proper passivation techniques, these devices could be very promising as high performance power switches for future power applications.

show abstract

“…1(e)). The sidewall conduction was suggested by previous studies [25][26][27][28] but has not been investigated, in addition carrier accumulation at the oxide/GaN interface at trench bottom of the nanowires was neglected. To investigate this effect, periodically gate-recessed MOS transistors were fabricated ( Fig.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Santoruvo

Tandon

et al. 2016

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-Enhanced performance in AlGaN/GaN Schottky barrier diodes (SBDs) is investigated using a nanowire hybrid tri-anode structure that integrates three-dimensional Schottky junctions with tri-gate transistors. The fabricated SBDs presented an increased output current density with improved linearity, above 1 A/mm at 5 V when normalized by effective anode width, over 3 orders of magnitude lower reverse leakage current and superior heat dissipation. The sidewall Schottky contacts reduced the turn-on voltage and eliminated the non-ideality caused by the AlGaN barrier. The large surface area of tri-gate architecture greatly enhanced heat dissipation and largely reduced the average temperature as well as thermal resistance of the integrated tri-gate transistors. The trench conduction near SiO2/GaN interface, formed under forward bias at both sidewalls and bottom of nanowire trenches, compensated part of the self-heating degradation and improved the output linearity of the device. Optimal design for the tri-anode structure, based on a model of critical filling factor, was proposed to surmount the issue of partial removal of two-dimensional electron gas (2DEG), unveiling the potential of nanostructured GaN devices to achieve comparable or even larger output current than counterpart planar devices.

show abstract

Modeling of GaN-Based Normally-Off FinFET

Cited by 41 publications

References 17 publications

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Contact Info

Product

Resources

About