Modeling of gunn domain effects in the output conductance of the high‐frequency small‐signal GaAs MESFET equivalent circuit

Abstract

A time‐delay element associated with the output conductance has been included in the small‐signal GaAs MESFET equivalent circuit to model Gunn domain effects. From experimental data collected to 36 GHz, these effects primarily contribute to decrease of the output conductance (gds) with increasing frequency which significantly affects the magnitude of the S‐parameter S22. © 1992 John Wiley & Sons, Inc.