Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

Kutsukake, Kentaro; Ise, Hideaki; Tokumoto, Yuki; Ohno, Yutaka; Nakajima, Kazuo; Yonenaga, Ichiro

doi:10.1016/j.jcrysgro.2012.02.004

Cited by 16 publications

(4 citation statements)

References 8 publications

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“…As in CZ‐Si, oxygen atoms were inevitably introduced from the crucible. The average concentration [O i ] in as‐grown ingots (about 0.0006 at.%) was, however, lower than in CZ‐Si (Kutsukake et al ., ). Also, small amount of metal impurities such as copper and nickel atoms (of the order of ppm) were inevitably introduced from the mould lubricant on the crucible surfaces.…”

Section: Methodsmentioning

confidence: 97%

Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations

Ohno

Fujiwara

Kutsukake

et al. 2017

Journal of Microscopy

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We have developed an analytical method to determine the segregation levels on the same tilt boundaries (TBs) at the same nanoscopic location by a joint use of atom probe tomography and scanning transmission electron microscopy, and discussed the mechanism of oxygen segregation at TBs in silicon ingots in terms of bond distortions around the TBs. The three-dimensional distribution of oxygen atoms was determined at the typical small- and large-angle TBs by atom probe tomography with a low impurity detection limit (0.01 at.% on a TB plane) simultaneously with high spatial resolution (about 0.4 nm). The three-dimensional distribution was correlated with the atomic stress around the TBs; the stress at large-angle TBs was estimated by ab initio calculations based on atomic resolution scanning transmission electron microscopy data and that at small-angle TBs were calculated with the elastic theory based on dark-field transmission electron microscopy data. Oxygen atoms would segregate at bond-centred sites under tensile stress above about 2 GPa, so as to attain a more stable bonding network by reducing the local stress. The number of oxygen atoms segregating in a unit TB area N (in atoms nm ) was determined to be proportional to both the number of the atomic sites under tensile stress in a unit TB area n and the average concentration of oxygen atoms around the TB [O ] (in at.%) with N ∼ 50 n [O ].

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Section: Methodsmentioning

confidence: 97%

Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations

Ohno

Fujiwara

Kutsukake

et al. 2017

Journal of Microscopy

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“…6 Therefore, a high growth rate can be attained using a high cooling rate even though crystals grow inside the crucible, similarly to the cast method. [15][16][17][18] The NOC method has several merits owing to the presence of a large low-temperature region and growth inside the low-temperature region. 19 It is important to determine whether the new furnace with two zone heaters still has such merits.…”

Section: Introductionmentioning

confidence: 99%

Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters

Nakajima¹,

Ono²,

Murai³

et al. 2016

Journal of Elec Materi

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Three zone heaters were generally used for a noncontact crucible (NOC) furnace. For practical reasons a simpler NOC furnace was developed with two zone heaters, which had a carbon heat holder to cover the three roles of each heater. Large low-temperature regions were obtained, and silicon ingots were grown in small crucibles with a large diameter and diameter ratio. Here, the diameter ratio is the ratio of the ingot diameter to the crucible diameter and can be as large as 0.90. The diameter ratio was controlled mainly by the temperature reduction of the first heater. Power changes of the second heater did not have a significant impact on the ingot diameter. Using this NOC furnace, maximum ingot diameters of 28.0, 33.5, and 45.0 cm were obtained using crucibles of 33, 40, and 50 cm in diameter, respectively. The oxygen concentration of the ingots did not strongly depend on the diameter ratio and were always low because convection in the Si melt was markedly suppressed by the carbon heat holder. Moreover, the oxygen concentration of the ingots has a tendency to become lower as the crucible diameter becomes larger.

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“…The mc-Si has the advantage of relatively low production cost and high market competitiveness compared with the single Si crystal produced by Czochralski (CZ) method. However, the photoelectric conversion efficiency for mc-Si solar cells is lower than that of the single crystal [1][2][3]. Directional solidification (DS) is the most widely used method for producing mc-Si for solar cells due to its cost effectiveness.…”

Section: Introductionmentioning

confidence: 99%

Temperature Distribution of Multi-Crystalline Silicon Ingots in the Directional Solidification Process

Xiang

Zhang

2013

AMR

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In order to better understand the casting process, we carried out global simulations of heat transfer to investigate the temperature distributions in furnace at 80 mm of insulation cage elevation and 40% of silicon melt solidification for multi-crystalline silicon (mc-Si) ingot using an industrial directional solidification furnace capable of producing 500 kg silicon ingot. The effect of heater position and the crystallization state of silicon melt on temperature distribution and interface shape are discussed as well to provide the essential knowledge for system optimization.

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Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

Cited by 16 publications

References 8 publications

Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations

Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations

Growth of Si Bulk Crystals with Large Diameter Ratio Using Small Crucibles by Creating a Large Low-Temperature Region Inside a Si Melt Contained in an NOC Furnace Developed Using Two Zone Heaters

Temperature Distribution of Multi-Crystalline Silicon Ingots in the Directional Solidification Process

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