Modeling of integrated extended cavity InP/InGaAsP semiconductor modelocked ring lasers

Bente, Eajm Erwin; Barbarin, Y.; Heck, Mjr Martijn; Smit, MK Meint

doi:10.1007/s11082-008-9184-y

Cited by 15 publications

(8 citation statements)

References 25 publications

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“…By assuming that the counter propagating pulses meet in the SA, because of the great reduction in loss by doing so, one observes that the CCW pulse will pass the SOA and saturate the gain before the CW pulse passes by. Thus the CCW pulse achieves a greater gain, which is in accordance to the observations made in [31], [32], [40].…”

Section: A the Origin Of Unidirectional Operationsupporting

confidence: 91%

Theoretical and Experimental Investigation of Unidirectionality in an Integrated Semiconductor Ring Mode-Locked Laser With Two Saturable Absorbers

Nielsen

Bente

Haan³

et al. 2018

IEEE J. Quantum Electron.

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where he is involved in integrated semiconductor laser systems.Erik den Haan studied electrical engineering and received the M.Sc. degree from the where he leads the Photonic Integrated Circuits group. His research focuses mainly on applications of photonic integration in microwave and terahertz photonics and energy-efficient interconnects. From 2007 to 2008, he was a Postdoctoral Researcher with the COBRA Research Institute, Eindhoven University of Technology, where he was part of the team that realized the first successful indium phosphide multi-project wafer run. From 2008 to 2009, he was with the Laser Centre, Vrije Universiteit, Amsterdam, The Netherlands, where he was involved in the development of integrated frequency-comb generators. From 2009 to 2013, he was a Postdoctoral Researcher at the University of California Santa Barbara, Santa Barbara, USA, where his research focused on the heterogeneous integration of silicon, silicon nitride, and III/V photonics.

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Section: A the Origin Of Unidirectional Operationsupporting

confidence: 91%

Theoretical and Experimental Investigation of Unidirectionality in an Integrated Semiconductor Ring Mode-Locked Laser With Two Saturable Absorbers

Nielsen

Bente

Haan³

et al. 2018

IEEE J. Quantum Electron.

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“…These values are in the range of what can be found in the literature for semiconductor materials [25,26,27,28]. The computed complex transfer function shows a very good agreement with the experimental data, both at small and large modulation index, for any experimental conditions (injected current, input optical power), and with a single set of the fitting parameters (A, B, C): our convenient model is predictive for any experimental conditions.…”

Section: Discussionsupporting

confidence: 79%

Dynamic saturation in semiconductor optical amplifiers: accurate model, role of carrier density, and slow light

Berger,

Alouini,

Bourderionnet

et al. 2009

Preprint

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We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices.

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“…A second point is that the relative position of the SOA and the SA can be optimized. This can be done for the largest operating range and output power 11 , or in a ring laser the main direction in which the laser operates can be determined 12,13 . A third aspect is that the output coupler structure can be passive.…”

Section: Use Of Active-passive Integration For Mllmentioning

confidence: 99%

Mode-locked lasers in InP photonic integrated circuits

et al. 2017

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Document VersionAuthor's version before peer-review Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTIn this paper an overview is presented of results obtained with mode-locked semiconductor laser systems that are monolithically integrated using a standardized photonic integration platform based on InP. The laser systems are operating around 1550nm. In this technology platform the basic components that form the laser circuits such as amplifiers, passive waveguides and filters, as well as the semiconductor processing are standardized. Several of the possibilities that such a standardized technology offer are demonstrated by a number of examples of realized devices such as low repetition rate mode-locked lasers, a stabilized comb system and a wide frequency comb source.

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Modeling of integrated extended cavity InP/InGaAsP semiconductor modelocked ring lasers

Cited by 15 publications

References 25 publications

Theoretical and Experimental Investigation of Unidirectionality in an Integrated Semiconductor Ring Mode-Locked Laser With Two Saturable Absorbers

Theoretical and Experimental Investigation of Unidirectionality in an Integrated Semiconductor Ring Mode-Locked Laser With Two Saturable Absorbers

Dynamic saturation in semiconductor optical amplifiers: accurate model, role of carrier density, and slow light

Mode-locked lasers in InP photonic integrated circuits

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