Modeling of Large-Grain Polysilicon Formation Under Retardation Effect of SPC

Cheng, C.F.; Leung, T. C.; Poon, M.C.; Kok, Chi-Wah; Chan, Mansun

doi:10.1109/ted.2004.838323

Cited by 9 publications

(22 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is because the lateral crystallization was stopped by the randomly oriented SPC grains. 19 This incubation period phenomenon occurred because, in the Ni-silicide mediated crystallization of a-Si, 18,20 the silicide precipitates acted as nucleation sites and crystallization of silicon proceeded via the migration of the precipitates through a-Si. This required Ni to react with Si to form silicide as a nucleation site.…”

Section: Resultsmentioning

confidence: 99%

Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures

Lin

2006

Journal of Elec Materi

View full text Add to dashboard Cite

Effects of oxygen in Ni films on the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon (poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period to be reduced to Ni metal for the subsequent mediated crystallization of a-Si.

show abstract

Section: Resultsmentioning

confidence: 99%

Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures

Lin

2006

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…3 for the unimplanted samples, as the NILC width has been reported to increase linearly with time within the incubation period. 19 The higher pre-exponential factor of the Arrhenius equation in Fig. 11 is probably due to the inherent dependency of the …”

Section: H739mentioning

confidence: 98%

“…19 In other words, once random grains are formed, an additional energy is required to break the crystalline bonding structure before the Si atoms can be recrystallized by NILC. This mechanism could explain how the suppression of random crystallization in fluorine implanted samples results in a larger NILC width.…”

Section: H739mentioning

confidence: 99%

“…19 Once the incubation time has been reached, lateral crystallization ceases due to the higher energy requirement for phase transformation. Hence, the conventional linear trend of an Arrhenius plot is not observed.…”

Section: H739mentioning

confidence: 99%

“…Hence, the conventional linear trend of an Arrhenius plot is not observed. 19 Figure 11 plots the measured NILC rate after 20 h of annealing against 1/kT for samples with and without a fluorine implant. Data from the work of Cheng et al 19 is also plotted for comparison and shows the intrinsic NILC rate at different temperatures, assuming that the incubation time has not been reached.…”

Section: H739mentioning

confidence: 99%

See 2 more Smart Citations

Increased Lateral Crystallization Width during Nickel Induced Lateral Crystallization of Amorphous Silicon Using Fluorine Implantation

Hakim

Ashburn

2007

J. Electrochem. Soc.

View full text Add to dashboard Cite

This paper reports a study of the effect of fluorine implantation on the nickel-induced lateral crystallization of amorphous silicon. To distinguish the effects of the fluorine and the implantation damage, the fluorine implant is either made directly into the ␣-Si or into the buffer oxide below the ␣-Si. For a 20 h anneal at 500°C, both types of fluorine implant give a 65% increase in the lateral crystallization width, a five times reduction in the density of nickel silicide precipitates, and an improved grain texture. In contrast, for 20 h anneals at 550 and 600°C, both types of fluorine implant give 29% and 85% reductions in the lateral crystallization width, respectively. The identical results obtained for fluorine implantation into the ␣-Si and the buffer oxide indicates that the effects observed are due to chemical effects of the fluorine rather than implantation damage in the ␣-Si. The increased crystallization width at 500°C is explained by the suppression of random crystallization at the bottom ␣-Si/SiO 2 interface. The reduced crystallization widths at 550 and 600°C are attributed to the diffusion and activation of fluorine and the formation of Si-F bonds making the ␣-Si more resistant to silicide-mediated phase transformation.The crystallization of amorphous silicon ͑␣-Si͒ has been intensively investigated for application in active-matrix flat-panel displays and three-dimensional ͑3D͒ electronics. 1-17 Solid phase crystallization was originally used to produce polysilicon from amorphous silicon, and can be typically achieved using a 20 h anneal at a temperature around 600°C. 1,2 The disadvantages of solid phase crystallization ͑SPC͒ are a small grain size, typically 0.5-1 m, and a lack of control over grain boundary locations. 1 As a result, thin-film transistors realized ͑TFT͒ on SPC films exhibit degraded performance. 3 To improve the performance of TFTs fabricated on SPC films, fluorination of the film after or before amorphous silicon crystallization has been used in the past. 4-9 For fluorination applied after amorphous silicon crystallization, the fluorine had demonstrable passivation effects on grain boundaries and gave improved device performance. 4-7 For fluorination applied prior to amorphous silicon crystallization, improved TFT electrical characteristics were shown to come from both grain size enhancement and fluorine passivation. 8,9 It was shown that fluorine ͑F͒ implantation with a dose greater that 2 ϫ 10 15 /cm 2 and a projected range at the bottom ␣-Si/SiO 2 interface, resulted in a significant increase in grain size 9 and a strong ͑111͒ preferred orientation 8 in the SPC film. This improvement in grain size was attributed to the retardation of the random crystallization owing to the higher degree of amorphization at the bottom ␣-Si/SiO 2 interface as a result of the fluorine implant. 8 Similar results were also reported in fluorine implanted silicongermanium ͑SiGe͒ films. 10 More recently, several techniques have been studied for the fabrication of large grain polycrystalline silicon ...

show abstract

Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films

et al. 2012

View full text Add to dashboard Cite

Modeling of Large-Grain Polysilicon Formation Under Retardation Effect of SPC

Cited by 9 publications

References 16 publications

Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures

Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures

Increased Lateral Crystallization Width during Nickel Induced Lateral Crystallization of Amorphous Silicon Using Fluorine Implantation

Effect of compressive stress on nickel-induced lateral crystallization of amorphous silicon thin films

Contact Info

Product

Resources

About