2023
DOI: 10.11591/ijece.v13i3.pp2632-2639
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Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Abstract: <span lang="EN-US">In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtaine… Show more

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