Modeling of magneto-conductivity of bismuth selenide: a topological insulator

Kumar, Yogesh; Sultana, Rabia; Sharma, Prince; Awana, V. P. S.

doi:10.1007/s42452-021-04397-8

Cited by 14 publications

(4 citation statements)

References 52 publications

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“…Thus, l ϕ can also be regarded as an indication for the presence of TSS in a material. Figure 12 shows fitting of MC data (the solid line) with HLN equation in the low magnetic field region (up to 3 T) for temperature 5 K ≤ T ≤ 100 K. The obtained best fit values of α and l ϕ are consistent with previously reported data 59 and are presented in Table 3. The obtained negative value of α depicts the presence of WAL effect in all the synthesized samples.…”

Section: Magneto-resistancesupporting

confidence: 86%

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Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi ₂ Te ₃

Singha

Das

Kulbashinskii

et al. 2022

Intl J of Energy Research

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We report the enhancement of electron mobility and power factor for 3D topological insulator Bi 2 Te 3 with Cobalt (Co) doping. Thermal variation of resistivity (ρ), thermopower (S), carrier concentration (n H ), magneto-resistance (MR), and magnetization measurements have been performed on synthesized Cobalt-doped n-type Bi 2 Te 3 , viz., Bi 2Àx Co x Te 3 (x = 0, 0.05, and 0.1) samples. Theoretical simulation of electrical and thermal transport parameters has been done in the frame of the Boltzmann equation approach and shows satisfactory agreement with experimental results. The thermoelectric performance, as estimated through power factor is found to increase with Co doping, with an enhancement of $47% is observed for Bi 1.9 Co 0.1 Te 3 sample. The positive linear MR and nearly cusp like behaviour at low field and low temperature confirms the presence of weak anti-localization (WAL) effects in pristine and Co-doped Bi 2 Te 3 samples. The field-dependent magnetization showing a cusp-like nature in the susceptibility data around zero field regions signifies the existence of topological surface state (TSS). MR along with magnetization data confirms the robustness of TSS with Co doping.

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Section: Magneto-resistancesupporting

confidence: 86%

“…The parameter l ϕ decreases gradually with increasing temperature for all samples. This type of variation of l ϕ with temperature indicates that 2D surface state plays dominant role in transport properties 59 …”

Section: Resultsmentioning

confidence: 86%

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi ₂ Te ₃

Singha

Das

Kulbashinskii

et al. 2022

Intl J of Energy Research

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“…For thicker S3 sample, the MR data clearly shows the less WAL effect and LMR approximation was introduced by which we can fit the parabolic shape of magnetoconductance data for sample S3. The modified HLN equation can be written as 36 : where the first term is HLN equation and the second term λ is a linear term which is taken into the account to reduce the effect of classical linear MR 36 . After applying the modified HLN equation, the α value was found to be 1.56 for sample S3 (Fig.…”

Section: Resultsmentioning

confidence: 99%

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Gautam

Aggarwal

Singh

et al. 2022

Sci Rep

Self Cite

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We report a low-temperature magneto transport study of Bi2Se3 thin films of different thicknesses (40, 80 and 160 nm), deposited on sapphire (0001) substrates, using radio frequency magnetron sputtering technique. The high-resolution x-ray diffraction measurements revealed the growth of rhombohedral c-axis {0003n} oriented Bi2Se3 films on sapphire (0001). Vibrational modes of Bi2Se3 thin films were obtained in the low wavenumber region using Raman spectroscopy. The surface roughness of sputtered Bi2Se3 thin films on sapphire (0001) substrates were obtained to be ~ 2.26–6.45 nm. The chemical and electronic state of the deposited Bi2Se3 was confirmed by X-ray photoelectron spectroscopy and it showed the formation of Bi2Se3 compound. Resistivity versus temperature measurements show the metallic nature of Bi2Se3 films and a slight up-turn transition in resistivity at lower temperatures < 25 K. The positive magneto-resistance value of Bi2Se3 films measured at low temperatures (2–100 K) confirmed the gapless topological surface states in Bi2Se3 thin films. The quantum correction to the magnetoconductivity of thin films in low magnetic field is done by employing Hikami–Larkin–Nagaoka theory and the calculated value of coefficient ‘α’ (defining number of conduction channels) was found to be 0.65, 0.83 and 1.56 for film thickness of 40, 80 and 160 nm, respectively. These observations indicate that the top and bottom surface states are coupled with the bulk states and the conduction mechanism in Bi2Se3 thin films varied with the film thicknesses.

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“…In contrast, the magnetoresistance of Sb 2 Te 3 (Figure 4b) and Bi 2 Se 3 (Figure 4c) nanostructured films were found to be positive in all ranges of temperatures and magnetic fields, reaching ~10% for Sb 2 Te 3 nanostructured films and ~30% for Bi 2 Se 3 nanostructured films at a temperature of 2-30 K and B ± 9T. Positive magnetoresistance is typical for the Sb 2 Te 3 and Bi 2 Se 3 with the metallic type of conductance [23,43,56,57]. It is generally explained as caused by the Lorentz force deflecting the charge carriers from the initial path to cyclotron orbiting.…”

Section: Resultsmentioning

confidence: 89%

The Impact of Topological States on the Thermoelectric Performance of p- and n-Type Sb2Te3/Bi2Se3-Multiwalled Carbon Nanotubes Heterostructured Networks

Andzane,

Buks,

Spalva

et al. 2023

Coatings

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The resistance and magnetoresistance of flexible thermoelectric p-type Sb2Te3-MWCNT, p-type Bi2Se3-MWCNT, and n-type Bi2Se3-MWCNT heterostructures were studied in the temperature range from 2 K to 300 K to reveal the conductance mechanisms governing the thermoelectric properties of these heterostructured networks. It was found that the conductance in heterostructured networks at different temperatures is governed by different processes and components of the networks. This effect was found to be related to the growth mechanisms of the Sb2Te3 and Bi2Se3 nanostructures on the MWCNT networks. At near-room temperatures, the Sb2Te3 and Bi2Se3 nanostructures were found to have the dominant contribution to the total conductance of the p-type Sb2Te3-MWCNT and n-type Bi2Se3-MWCNT networks. In turn, the conduction of p-type Bi2Se3-MWCNT heterostructured networks in a full temperature range and p-type Sb2Te3-MWCNT and n-type Bi2Se3-MWCNT heterostructured networks at temperatures below 30 K was governed by the MWCNTs; however, with the contribution from 2D topological states of Sb2Te3 and Bi2Se3 nanostructures, these were manifested by the weak antilocalization effect (WAL) cusps observed at temperatures below 5–10 K for all heterostructured networks considered in this work.

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Modeling of magneto-conductivity of bismuth selenide: a topological insulator

Cited by 14 publications

References 52 publications

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi ₂ Te ₃

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi ₂ Te ₃

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

The Impact of Topological States on the Thermoelectric Performance of p- and n-Type Sb2Te3/Bi2Se3-Multiwalled Carbon Nanotubes Heterostructured Networks

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Modeling of magneto-conductivity of bismuth selenide: a topological insulator

Cited by 14 publications

References 52 publications

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi 2 Te 3

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi 2 Te 3

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

The Impact of Topological States on the Thermoelectric Performance of p- and n-Type Sb2Te3/Bi2Se3-Multiwalled Carbon Nanotubes Heterostructured Networks

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Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi ₂ Te ₃

Enhancement of electron mobility and thermoelectric power factor of cobalt‐doped n ‐type Bi ₂ Te ₃