Modeling of nanohole silicon pin/nip photodetectors: Steady state and transient characteristics

Yamada, Toshio; Devine, Ekaterina Ponizovskaya; Ghandiparsi, Soroush; Bartolo-Perez, Cesar; Mayet, Ahmed S.; Cansizoglu, Hilal; Gao, Yang; Ahamed, Ahasan; Wang, Shih-Yuan; Islam, M. Saif

doi:10.1088/1361-6528/abfb98

Cited by 11 publications

(13 citation statements)

References 39 publications

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“…This process causes the positive shift of the Vth. When the OFF-state condition or the negative gate bias is applied, the Fermi level shifts downwards resulting in the detrapping process of electrons back to the 2DEG channel, as shown in Figure 4c [31]. This process causes the negative shift of the Vth.…”

Section: Resultsmentioning

confidence: 98%

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

et al. 2022

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This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiNx/SiON composite gate dielectric. The threshold voltage shift in the devices was investigated. The MIS-HEMTs with the SiNx/SiON composite gate dielectric exhibited superior threshold voltage uniformity and small threshold voltage hysteresis than the reference device with SiNx only gate dielectric. The variation of the device threshold voltage was mainly related to trapping process by the interface states, as confirmed by band diagrams of MIS-HEMTs at different gate biases. Based on frequency-dependent capacitance measurements, interface state densities of the devices with the composite and single gate dielectrics were extracted, where the former showed much smaller interface state density. These results indicate that the SiNx/SiON composite gate dielectric can effectively improve the device performance of GaN-based MIS-HEMTs and contribute to the development of high-performance GaN electronic devices.

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Section: Resultsmentioning

confidence: 98%

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

et al. 2022

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“…Under this condition, a photonic crystal was formed. Photonic crystals allow slow Bloch modes with a group velocity of photons close to zero, resulting in a strong enhancement in light–matter interaction [ 30 , 31 , 32 ].…”

Section: Resultsmentioning

confidence: 99%

Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

et al. 2022

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Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of both the conventional photodetector and unique electronic properties of zero-dimensional structures in an unprecedented way. However, the biggest drawback of QDs is the small absorbance of infrared radiation due to the low density of the states coupled to the dots. In this paper, we report on the Ge/Si QD pin photodiodes integrated with photon-trapping hole array structures of various thicknesses. The aim of this study was to search for the hole array thickness that provided the maximum optical response of the light-trapping Ge/Si QD detectors. With this purpose, the embedded hole arrays were etched to different depths ranging from 100 to 550 nm. By micropatterning Ge/Si QD photodiodes, we were able to redirect normal incident light laterally along the plane of the dots, therefore facilitating the optical conversion of the near-infrared photodetectors due to elongation of the effective absorption length. Compared with the conventional flat photodetector, the responsivity of all microstructured devices had a polarization-independent improvement in the 1.0–1.8-μm wavelength range. The maximum photocurrent enhancement factor (≈50× at 1.7 μm) was achieved when the thickness of the photon-trapping structure reached the depth of the buried QD layers.

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“…These nanoholes can direct the light to propagate laterally allowing it more time to be absorbed efficiently in a thinner region 17,21 . Thus, making them fast sensors capable of 30 ps timing response 22,23 . Furthermore, they can modulate light penetration depth and enhance gain in avalanche photodiodes making them suitable for low-light applications [24][25][26] .…”

Section: Introductionmentioning

confidence: 99%

Scalable photodetector design with sub-picosecond response time

Ahamed,

Rawat,

McPhillips

et al. 2024

Quantum Sensing and Nano Electronics and Photonics XX

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Addressing the persistent speed-efficiency trade-off, advanced photodetector designs are increasingly incorporating nanophotonic structures to enhance detection efficiency. However, contemporary detector technologies continue to grapple with issues of high-power consumption and limited scalability potential. Embedded nanostructures in photodetectors have already been demonstrated to improve efficiency, gain, and slight improvement in high-speed performance. This paper presents a unique, scalable detector design that leverages nanophotonic enhancement while delivering an ultra-high response time with sub-picosecond full-width-half-maximum for 450 nm illumination wavelength with low breakdown voltage (~8V). Our innovative design strategy involves etching nanoholes into conventional p-i-n photodetectors (1 μm absorbing layer) and doping alternate nanoholes with p+ and n+ doping. The nanoholes are etched all the way through the intrinsic layer to connect with the top and bottom highly doped p+ and n+ doped layer forming a composite vertical-lateral electric field in the photodetector. This technique drastically reduces the effective carrier transport length to mere hundreds of nanometers without diminishing the photon absorption area. As a result, the timing response improves significantly compared to conventional models achieving sharp rise time of ~0.6 ps, fall time of ~8.5 ps, and full width half maximum of <4 ps. Furthermore, the design offers scalability along with advances in lithography processes, setting a promising direction for ultra-high-speed detectors scaling down to <1 ps response time suitable for emerging applications.

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Modeling of nanohole silicon pin/nip photodetectors: Steady state and transient characteristics

Cited by 11 publications

References 39 publications

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

Light-Trapping-Enhanced Photodetection in Ge/Si Quantum Dot Photodiodes Containing Microhole Arrays with Different Hole Depths

Scalable photodetector design with sub-picosecond response time

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