Modeling of optoelectronic devices with one-band effective mass equation: nonequilibrium Green’s function approach

Kolek, Andrzej

doi:10.1007/s11082-016-0384-6

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…With this motivation, we employ a NEGF based quantum transport model withing the single-band effective mass approximation [34,37,55] to investigate the miniband and spectral transport properties [56][57][58] of a finite T2SL structure. In the presence of momentum and phase-breaking elastic scattering processes [37-39, 59, 60], the NEGF results for a finite structure evidence a close agreement with the k.p results of an infinite SL.…”

Section: Introductionmentioning

confidence: 99%

Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

Mukherjee¹,

Singh²,

Bodhankar³

et al. 2021

J. Phys. D: Appl. Phys.

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Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail. In the presence of momentum and phase-relaxed elastic scattering processes, we show that a self-consistent non-equilibrium Green’s function method within the effective mass approximation can be an effective tool to fairly predict the miniband and spectral transport properties and their dependence on the design parameters such as layer thickness, superlattice periods, temperature, and built-in potential. To benchmark this model, we first evaluate the band properties of an infinite T2SL with periodic boundary conditions, employing the envelope function approximation with a finite-difference discretization within the perturbative eight-band framework. The strong dependence of the constituent material layer thicknesses on the band-edge positions and effective masses, offers a primary guideline to design performance-specific detectors for a wide range of operation. Moving forward, we demonstrate that using a finite T2SL structure in the Green’s function framework, one can estimate the bandgap, band-offsets, density of states and spatial overlap which comply well with the results and the experimental data. Finally, the superiority of this method is illustrated via a reasonable estimation of the band alignments in barrier-based multi-color non-periodic complex T2SL structures. This study, therefore, provides deep physical insights into the carrier confinements in broken-gap heterostructures and sets a perfect stage to perform transport calculations in a full-quantum picture.

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Section: Introductionmentioning

confidence: 99%

Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

Mukherjee¹,

Singh²,

Bodhankar³

et al. 2021

J. Phys. D: Appl. Phys.

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show abstract

“…In this work, we employ the quantum transport based NEGF formalism [37,38] as a mathematical tool to numerically compute these parameters, incorporating the concerned device physics models [5,23,24,[39][40][41][42][43][44][45]. The retarded Green's function (G) with the proper information of self energies corresponding to the macroscopic contacts and scattering phenomena along the longitudinal energy (E) is defined as [46][47][48][49][50],…”

Section: B Keldysh Negf Methodsmentioning

confidence: 99%

Comprehensive quantum transport analysis of M-Superlattice structures for barrier infrared detectors

Singh,

Mukherjee,

Muralidharan

2021

Preprint

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In pursuit of designing superior type-II superlattice barrier infrared detectors, this study encompasses an exhaustive analysis of utilizing M-structured superlattices for both the absorber and barrier layers through proper band engineering and discusses its potential benefits over other candidates. The electronic band properties of ideally infinite M-structures are calculated using the eight band k.p method which takes into account the effects of both strain and microscopic interface asymmetry to primarily estimate the bandgap and density-of-states effective mass and their variation with respect to the thicknesses of the constituent material layers. In contrast, for practical finite-period structures, the local density-of-states and spectral tunneling transmission and current calculated using the Keldysh non-equilibrium Green's function approach with the inclusion of non-coherent scattering processes offer deep insights into the qualitative aspects of miniband and localization engineering via structural variation. Our key results demonstrate how to achieve a wide infrared spectral range, reduce tunneling dark currents, induce strong interband wavefunction overlaps at the interfaces for adequate absorption, and excellent band-tunability to facilitate unipolar or bipolar current blocking barriers. This study, therefore, perfectly exemplifies the utilization of 6.1 Å material library to its full potential through the demonstration of band engineering in M-structured superlattices and sets up the right platform to possibly replace other complex superlattice systems for targeted applications.

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“…With this motivation, we employ a NEGF based quantum transport model withing the single-band effective mass approximation [34,52,53] to investigate the miniband and spectral transport properties [54][55][56] of a finite T2SL structure. In the presence of momentum and phase-breaking elastic scattering processes [37,53,[57][58][59], the NEGF results evidence a close agreement with the k.p results for an infinite SL.…”

Section: Introductionmentioning

confidence: 99%

Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

Mukherjee,

Singh,

Bodhankar

et al. 2021

Preprint

View full text Add to dashboard Cite

Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail. In the presence of momentum and phase-relaxed elastic scattering processes, we show that a selfconsistent non-equilibrium Green's function method within the effective mass approximation can be an effective tool to fairly predict the miniband and spectral transport properties and their dependence on the design parameters such as layer thickness, superlattice periods, temperature, and built-in potential. To benchmark this model, we first evaluate the band properties of an infinite T2SL with periodic boundary conditions, employing the envelope function approximation with a finite-difference discretization within the perturbative eight-band k.p framework. The strong dependence of the constituent material layer thicknesses on the band-edge positions and effective masses offers a primary guideline to design performance-specific detectors for a wide range of operation. Moving forward, we demonstrate that using a finite T2SL structure in the Green's function framework, one can estimate the bandgap, band-offsets, density of states, and spatial overlap which comply well with the k.p results and the experimental data. Finally, the superiority of this method is illustrated via a reasonable estimation of the band alignments in barrier-based multi-color nonperiodic complex T2SL structures. This study, therefore, provides deep physical insights into the carrier confinements in broken-gap heterostructures and sets a perfect stage to perform transport calculations in a full-quantum picture.

show abstract

Modeling of optoelectronic devices with one-band effective mass equation: nonequilibrium Green’s function approach

Cited by 6 publications

References 11 publications

Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

Comprehensive quantum transport analysis of M-Superlattice structures for barrier infrared detectors

Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

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