Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency ( ${I}_{C}$ / ${g}_{m}$ )

Agrawal, K.C.; Srivastava, Ritu; Rajput, Shyam Singh

doi:10.1109/ted.2017.2715058

Cited by 5 publications

(4 citation statements)

References 22 publications

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“…A theoretical limit of field-effect devices is 60 mV decade −1 . As some tunneling effect has been observed in this device, it may be the reason for low sub threshold swing [36].…”

Section: Transfer Characteristicsmentioning

confidence: 62%

“…For a MOSFET, g m /I D is inversely proportional to V GS or constant, hence it is expected that I D /g m will be a straight line. The plot between I D /g m versus V GS to find out the slope for extracting the threshold voltage (V th ) of the device has been drawn as shown in figure 3(b).The slope has been found to be 0.5 so as to have the value of power factor (n, which is equal to 1/slope has been extracted) as 2 at fixed V DS = −1 V [36]. Now a graph (blue) plotted between (I D ) 1/(n = 2) versus V GS has been used to extract the value of V th which has been found to be −1 V at V DS = −0.5Vas shown in figure 3(c).…”

Section: Transfer Characteristicsmentioning

confidence: 99%

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Study of ambipolar properties of organic-inorganic CH₃NH₃PbI₃ perovskite for vertical field effect transistor

Agrawal¹,

Gupta

Srivastava³

et al. 2022

Eng. Res. Express

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A vertical field effect transistor (VFET) with short channel length of 120nm, fabricated using organic-inorganic perovskite (CH3NH3PbI3) material shows the ambipolar properties and switches from P mode to N mode or vice versa, just by changing the polarity of applied bias. The operating voltage is as low as 0.5V, which allows it to be integrated with solar cell devices and hence having the possibility of battery less mobile gadgets. To ensure the quality of VFET with CH3NH3PbI3 as a channel length, different parameters have been extracted. The transistor efficiency (TE), mobility (µp), and transconductance (gm) in P mode, have been estimated as 14V-1, 1.5 cm2V-1 s-1 and 500±150µS, respectively. For N mode, these parameters have been found to be as 4V-1, 0.97 cm2V-1 s-1 and 60±10µS respectively. The hole and electron densities are found to be as ~1016cm-3 and ~1014cm-3 respectively which confirm the ambipolar nature of CH3NH3PbI3.

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“…A theoretical limit of field-effect devices is 60 mV decade −1 . As some tunneling effect has been observed in this device, it may be the reason for low sub threshold swing [36].…”

Section: Transfer Characteristicsmentioning

confidence: 62%

Section: Transfer Characteristicsmentioning

confidence: 99%

Study of ambipolar properties of organic-inorganic CH₃NH₃PbI₃ perovskite for vertical field effect transistor

Agrawal¹,

Gupta

Srivastava³

et al. 2022

Eng. Res. Express

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show abstract

“…The fabricated device has been shown in Figure b. The source terminal has been made porous, , to control I ds through V gs . In all the fabricated devices (>100), the NDR regions have been observed (both in the transfer and output characteristics).…”

Section: Resultsmentioning

confidence: 99%

Perovskite Resonant Tunneling FET with Sequential Negative Differential Resistance Peaks

Agrawal

Gupta

Srivastava

et al. 2019

ACS Appl. Electron. Mater.

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A vertical resonant tunneling (RT) field effect transistor (VRTFET), fabricated using perovskite (CH3NH3PbI3), has been analyzed for sequential sharp negative differential resistance (NDR) peaks useful in multiple-valued logic devices. NDR peaks are attributed to the sub-bands formation within the parabolic shaped band gap, present at the channel and drain/source interface due to Schottky barriers. Ambipolar CH3NH3PbI3 imparts both p and n mode characteristics with RT NDR peaks. An unprecedentedly high (100 to 1000 V–1) curvature coefficient (ϒ) has been found with two NDR peaks at a short interval, whose positions shift left, with gate bias. Due to the ionic nature of CH3NH3PbI3, hysteresis has also been observed in the transfer characteristics. This structure can overcome the limit of 60 mV/decade as well as a curvature limit of 40 V–1, important parameters for analog and digital applications. So, these devices promise cheaper and easy fabrication at commercial scale operation at ultralow voltage and low power.

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“…For an MOSFET, we know that g m /I D is either constant or inversely proportional to ( V GS – V th ); hence, I D /g m versus ( V GS – V th ) will be a straight line. This institutively signals to get the plot for the inverse of TE ( I D /g m ) versus V GS to calculate the slope of the straight line from which the value of n is 1.7 ( n = 1/slope) [32] as shown in Fig. 9.…”

Section: Device Performancementioning

confidence: 99%

Analysing the TIPSP‐based VOFET through transistor efficiency ( g _m /I _D )

Agrawal

Srivastava

Rajput

2018

IET Circuits, Devices & Systems

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A simple vertical organic field-effect transistor (VOFET) structure has been fabricated using ambipolar 6, 13-bis (triisopropylsilyl ethynyl) pentacene (TIPSP) with a channel length (L) of 90 nm. This device can operate at-2 V which is much lower than the voltage, reported so far for the organic devices based on TIPSP. The first time, the authors are using transistor efficiency to extract VOFET's parameters. The threshold voltage (V th) of the device has been found to vary between 0.18 and 0.38 V with the current on/off ratio (I on /I off) of 10 4. The mobility (µ) of the device has been calculated as 0.62 cm 2 /Vs. The subthreshold slope, transconductance (g m), output conductance (g d), and early voltage (V E) have been found to be 140 ± 30 mV/ decade, 2 µS, 10 −6 S, and 1.3 ± 2 V, respectively.

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Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency ( ${I}_{C}$ / ${g}_{m}$ )

Cited by 5 publications

References 22 publications

Study of ambipolar properties of organic-inorganic CH₃NH₃PbI₃ perovskite for vertical field effect transistor

Study of ambipolar properties of organic-inorganic CH₃NH₃PbI₃ perovskite for vertical field effect transistor

Perovskite Resonant Tunneling FET with Sequential Negative Differential Resistance Peaks

Analysing the TIPSP‐based VOFET through transistor efficiency ( g _m /I _D )

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Modeling of Organic Permeable Base Transistor Based on Inverse of Transistor Efficiency ( ${I}_{C}$ / ${g}_{m}$ )

Cited by 5 publications

References 22 publications

Study of ambipolar properties of organic-inorganic CH3NH3PbI3 perovskite for vertical field effect transistor

Study of ambipolar properties of organic-inorganic CH3NH3PbI3 perovskite for vertical field effect transistor

Perovskite Resonant Tunneling FET with Sequential Negative Differential Resistance Peaks

Analysing the TIPSP‐based VOFET through transistor efficiency ( g m /I D )

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Product

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Study of ambipolar properties of organic-inorganic CH₃NH₃PbI₃ perovskite for vertical field effect transistor

Study of ambipolar properties of organic-inorganic CH₃NH₃PbI₃ perovskite for vertical field effect transistor

Analysing the TIPSP‐based VOFET through transistor efficiency ( g _m /I _D )