Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH₃/H₂ System: A Computational Fluid Dynamics Simulation Study

Abstract

A model of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy was studied by computational fluid dynamics simulations. We included the formation of polymers such as [Ga–N] n and [MMGaNH] n (n=2–6) in the reaction model in a TMGa/NH3/H2 system for the first time. The simulations using this reaction modeling successfully explained experimental growth rates at various temperatures, and clarified the main reaction pathway of GaN growth. The change in gas-phase chemistry due to temperature in the range of 300–1400 K was investigated. It was found that the type of reactive molecule changes with temperature, followed by the formation of different polymers in a certain temperature range, that is, [MMGaNH] n at 600–750 K and [Ga–N] n at higher temperatures.

Analysis of pulsed injection of precursors in AlN‐MOVPE growth by computational fluid simulation

“…We have studied reaction pathways of GaN-and AlNMOVPEs by computational fluid dynamic (CFD) simulation [9][10][11][12]. A modelling of reaction pathways in a TMAl/NH 3 /H 2 system including parasitic and polymeric reactions was proposed for CFD simulation, and AlN growth rates calculated were in good agreement with experimental ones [12].…”

Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis

“…In Figure 18, the average growth rate is attained at temperatures of 1100-1300 K. The predicted growth rates correspond well with the experimental data at each temperature point ( Figure 18). Experiment 3 was performed for a horizontal quartz reactor [13], displayed in Figure 19, for which the initial and boundary conditions are provided in Table 7. The average growth rate is attained at temperatures of 600-1400 K. Just likes Experiment 1 and 2, the predicted growth rates (Figure 20) correspond well with the experimental data in a blue-LED process temperature.…”

High Growth Rate MOVPE

“…Figure 6.7 illustrates major steps for growing GaN [12]. They suggested that a major reaction pathway is (1) TMG W NH 3 adduct formation, (2) methane elimination from TMG W NH 3 adduct, followed by another methane elimination, and (3) GaN molecule formation.…”

“…They have also suggested that a high flow speed is critical to eliminate particulate generation in a horizontal reactor. Hirako and Ohkawa also reported OEGaN 4 molecules condensing at the entrance region of a horizontal reactor, where there is a large temperature gradient in the vapor phase [5]. High growth rate can be realized by considering above-mentioned problems.…”