Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics

Abstract

In this paper, an accurate model of resistive drift region in laterally diffused metal oxide semiconductor (LDMOS) is presented. We have improved the dynamically varying depletion width model at the drift/substrate junction, by considering both the drain and substrate bias effects. The both bias condition causes the resistance modification of the high resistive drift region for the reduced-surface-field structure (RESURF). In addition, new expansion-effect model is developed by considering the substrate bias effect. The developed models have been implemented into Hiroshima University starc insulated gate field effect transistor model for high voltage (HiSIM-HV) and it is proved that the models reproduce measured direct current (DC) characteristics for the wide variety of the substrate bias variation.