Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization

Abstract

Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. The parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

Single Event Transients in CMOS Ring Oscillators

“…The most common issue here is that many of the technology parameters are unknown to designers. A well accepted model to assess charge injection in analog circuits is the double exponential current shape [17]:…”

Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects

“…It has a plateau region after a very short high-amplitude current peak when higher levels of charge are generated [31]. To deal with this issue, some voltage-dependent SET current models have been developed [30,[32][33][34].…”

Circuit Engineering Modeling of Single Event Effects under Impact of Heavy-Charged Particles in SUB-100 NM CMOS ICs

“…В работе [21] предложен другой способ задания тока ионизационного отклика. Для учета ограничения ионизационного тока на уровне тока насыщения открытого комплементарного транзистора применяется сдво-енный двухэкспоненциальный источник тока.…”

“…Сравнение форм импульсов тока (а) и напряжения (б) ионизационного откли-ка, рассчитанных для емкости выходного узла и тока насыщения транзисторов с использованием сдвоенного двухэкспоненциального источника тока [21] Fig.2. Comparison of injected dual double-exponential current waveforms (a) and the resulting SET voltage waveforms (b) for circuit configurations with different loads (load capacitance and transistor saturation currents) [21] хорошо описывающая базовые принципы собирания заряда в устройстве в отсутствие влияния внешних цепей [22]. Конденсатор C S обеспечивает сохранение заряда и не пред-ставляет какую-либо физическую емкость.…”