2019
DOI: 10.1063/1.5100599
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Modeling of surface gap state passivation and Fermi level de-pinning in solar cells

Abstract: The behaviour of gap states due to coordination defects (eg dangling bonds) and metal induced gap states (MIGS) are compared using density functional supercell calculations. Whilst both types of gap states cause carrier recombination, they are passivated in different ways. Defects can be passivated by shifting their states out of the gap, whereas MIGS lie on normally coordinated atoms and their states cannot be shifted. Their 'passivation' requires the insertion of an insulating layer to attenuate them suffici… Show more

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Cited by 23 publications
(21 citation statements)
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“…Louie et al [26,85] developed a more elaborated approach introducing the MIGS density at the semiconductor midgap ( MIGS D ) and proposed the following expression for the S parameter: system. We have obtained from the DFT calculations a MIGS density of 2.4 × 10 14 /cm 2 /eV comparable with the data available in the literature [24,26,82]. The slope parameter calculated using Eq.…”
Section: B Dft Resultssupporting
confidence: 80%
“…Louie et al [26,85] developed a more elaborated approach introducing the MIGS density at the semiconductor midgap ( MIGS D ) and proposed the following expression for the S parameter: system. We have obtained from the DFT calculations a MIGS density of 2.4 × 10 14 /cm 2 /eV comparable with the data available in the literature [24,26,82]. The slope parameter calculated using Eq.…”
Section: B Dft Resultssupporting
confidence: 80%
“…The passivating interlayer not only passivates the c-Si surface but also physically separates the c-Si absorber from overlying metallic layers which would otherwise induce energy states within the silicon bandgap (via MIGS). 40 Additionally, the suppression of FLP introduces a range of potential mechanisms with which to achieve carrier selectivity. These include the exploitation of asymmetries in band offsets, work functions, tunnelling probabilities and charge carrier mobilities at the c-Si/contact interface, as well as the use of energy-selective defect bands.…”
Section: Passivating Contacts: Materials and Devicesmentioning
confidence: 99%
“…Carrier-selective contacts have been a hot research topic in efficient crystalline silicon (c-Si) solar cells, aiming at realizing effective separation and collection of photogenerated holes and electrons. Metallization on a lightly doped silicon base directly results in the Fermi-level pinning and the Schottky barrier in the interface, limiting the power conversion of c-Si solar cells. Heavy doping has been a conventional approach to achieving carrier-selective contact in traditional c-Si solar cells. However, due to doping-related recombination and parasitic absorption, this method always imposes inherent performance limitations.…”
Section: Introductionmentioning
confidence: 99%