2011
DOI: 10.1016/j.diamond.2011.03.035
|View full text |Cite
|
Sign up to set email alerts
|

Modeling of ta-C growth: Influence of the technological parameters

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
8
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 16 publications
(9 citation statements)
references
References 31 publications
1
8
0
Order By: Relevance
“…The reason for this effect is that the penetration depth of the impinging carbon ions, and the defect growth caused by droplets or substrate impurities, depends not only on the ion energy but also on the incident angle [91,94,95]. This means that geometric considerations and rotation effects in industrial coaters influence non-uniformly the sp 3 content of the deposited films [91].…”
Section: Accepted Manuscriptmentioning
confidence: 95%
See 2 more Smart Citations
“…The reason for this effect is that the penetration depth of the impinging carbon ions, and the defect growth caused by droplets or substrate impurities, depends not only on the ion energy but also on the incident angle [91,94,95]. This means that geometric considerations and rotation effects in industrial coaters influence non-uniformly the sp 3 content of the deposited films [91].…”
Section: Accepted Manuscriptmentioning
confidence: 95%
“…Industrially important aspects of coating growth have been discussed, on the basis of a more complex thermal model in which the bonding structure in a-C coatings is determined by the energy of the impinging carbon ions, the angle of incidence, the substrate temperature, and the deposition rate [91]. It has often been observed that the degree of sp 3 C-C bonding increases sharply with the ion energy up to around 100 eV, provided that the substrate temperature remains low enough [5,92].…”
Section: Accepted Manuscriptmentioning
confidence: 99%
See 1 more Smart Citation
“…It is well known, that ta-C films can be produced using different PVD-methods like S bend filtered cathodic arc [11]- [13], pulsed laser vacuum arc [4] [9] or pulsed laser deposition (PLD) [14]. PLD has the advantage of low droplet formation in comparison to e.g.…”
Section: Introductionmentioning
confidence: 99%
“…An increase of the sp 3 -content causes an increase of hardness, elasticity modulus and simultaneously an increase in transparency in the visible and near infrared range (e.g. [5] [7]- [9]). …”
Section: Introductionmentioning
confidence: 99%