Modeling of the Current-Voltage Characteristics of LDD Mos Transistor at Cryogenic Temperature

Medvedev, Dmitriy; Малаханов, Алексей

doi:10.51932/9785907271739_390

CAD/EDA, Modeling and Simulation in the Modern Electronics. Сборник Научных Трудов IV Международной Научно-Практической Конфере 2020

DOI: 10.51932/9785907271739_390

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Modeling of the Current-Voltage Characteristics of LDD Mos Transistor at Cryogenic Temperature

Dmitriy Medvedev¹,

Алексей Малаханов²

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2022

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Automated Calculation of Static Characteristics of Silicon Fast Recovery Diodes for Applying in Power Electronics Devices

Gerasimov

Dantsev

Krasyukov

2022

Automation and Modeling in Design and Management

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Calculating, analysing and verifying current-voltage characteristics (CVC) of a silicon fast-recovery diode (FRD) are performed using the methods of instrumental-technological modelling. The article determines the planar structure configuration of a semiconductor device crystal, the levels of doping and doses of irradiation with high-energy particles, at which the required values of operating and maximum forward currents and reverse (breakdown) voltages are achieved. The main tasks to be solved in the article are to determine the optimal design and technological parameters of the fast-recovery diode (FRD) structure and verifying the calculated current-voltage characteristics (CVC) values with the experimental data taken from the SKKE310F12 fast recovery diode at various ambient temperatures. The novelty of the work is represented by the obtained verified instrumental-technological model of FRD, which is possible for industrial implementation in the form of a semiconductor device at the production base of domestic microelectronics enterprises. The results of the research can be used in producing the element base of power electronics for pulsed power converters, namely discrete FRD, FRD structures as part of power modules based on MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT transistors.

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Automated Calculation of Static Characteristics of Silicon Fast Recovery Diodes for Applying in Power Electronics Devices

Gerasimov

Dantsev

Krasyukov

2022

Automation and Modeling in Design and Management

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Modeling Power Characteristics of Schottky Diode Under Extreme Operation Modes

Malahanov¹,

Medvedev

2022

Automation and Modeling in Design and Management

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The results of device-technological modelling of static current-voltage characteristics (CVC), as well as the dependences of differential resistance and power dissipation for the structure of a silicon carbide Schottky diode in Synopsys Sentaurus TCAD are presented. As a result of the research and modelling, the design and technological parameters of the Schottky diode are selected, on the basis of which the current-voltage characteristics are obtained, comparable with the specified accuracy with the physical experiment (the anode current is not less than 100 A, the breakdown voltage is not less than 1400 V at a temperature of 77 K). Verifying the static characteristics of the Schottky diode obtained by the instrumental-technological modelling is carried out by comparing the results of a computational experiment with a physical study of the Cree C4D20120D diode for a temperature range from 300 K to 77 K. The novelty of the work lies in developing an instrument-technological model (ITM) of a semiconductor device that takes into consideration a crystal self-heating effect; obtaining results reflecting the characteristics of a semiconductor device in the normal and extreme temperature operating conditions; in obtaining dependences reflecting the change in differential resistance and power dissipation; in having the possibility to use the results of the developed ITM for the industrial implementation of the silicon carbide Schottky diode at Russian enterprises in the form of discrete semiconductor devices, or elements as part of semiconductor power modules.

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Modeling of the Current-Voltage Characteristics of LDD Mos Transistor at Cryogenic Temperature

Cited by 2 publications

References 0 publications

Automated Calculation of Static Characteristics of Silicon Fast Recovery Diodes for Applying in Power Electronics Devices

Automated Calculation of Static Characteristics of Silicon Fast Recovery Diodes for Applying in Power Electronics Devices

Modeling Power Characteristics of Schottky Diode Under Extreme Operation Modes

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