Modeling of the scattering mechanisms of a two-dimensional Fermi electron gas in the heterostructure InAs/AlSb/InAs

Abstract

The article investigates the mechanism by ionized atoms carrier scattering at impurities heterostructure InAs/AlSb with two occupied subbands. The aim of the article is to develop and complement the existing theory which fully describes the quantum mechanical processes in the structure of the study. Conducted transport time calculation showed that the proposed theory accurately describes the two-dimensional carrier scattering mechanism is donor impurity ions in the active layer of InAs. It was found that the lifetime of limiting the mobility of two-dimensional carrier in scattering by impurity ions is 10 −12 s.

Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells

“…The upper limit for L is limited by the value which still allows to realize quantum-well energy levels in the active layer InGaN. The lower limit corresponds to the minimum value of the mobility [7].…”

“…Relaxation time of two-dimensional carriers in InGaN/ AlGaN/GaN heterostructure with one filled subzone of the dimensional quantization within the piezoelectric scattering mechanism can be calculated using the Boltzmann general kinetic equation [6,7] ij means the lifetime of two-dimensional carriers under conditions of the elastic scattering mechanism being studied,E F i = E F − E i means the Fermi level in the i-th subzone,E i is the value of the energy level of the dimensional quantization. K ij stands for the components of 2DEG diffusion tensor, which determine the contribution of piezoelectric fields to the dominant conductivity channel.…”

“…where, acceptable size of standard interval is defined as (12) f T (q) = 13 + 78(q∕b) + 72(q∕b) 2 + 82(q∕b) 3 + 36 (q∕b) 4 + 6(q∕b) 5 13(1 + (q∕b)) 6 , f L (q) = 1 + 6(q∕b) + 12(q∕b) 2 + 2(q∕b) 3 (1 + (q∕b)) 6…”

“…Modern InGaN/AlGaN/GaN heterostructures are widely used in semiconductor electronics in the production of high-frequency devices such as microwave detectors, ultra-bright LEDs and laser diodes [1,2]. Such interest in group III-based compounds is determined by the fact that these semiconductor structures have a wide band gap, the size of which can be modified by varying the In concentration in the InGaN barrier layer.…”

“…Such interest in group III-based compounds is determined by the fact that these semiconductor structures have a wide band gap, the size of which can be modified by varying the In concentration in the InGaN barrier layer. These features make possible to form transistors and monolithic schemes based on the InGaN/AlGaN/GaN heterostructures with high capacity and frequency characteristics (> 10 W/mm) [2].…”