Modeling of thermoelectric processes in a power MOSFET transistor with a structural defect

Abstract

The results of thermal modeling of the temperature distribution in the structures of a high-power MOSFET transistor with macrodefects of an electrophysical nature are presented. It is shown that the presence of a defect in the structure of the transistor leads to an increase in the maximum temperature of the channel overheating and an increase in the inhomogeneity of the temperature distribution over the area of the active region of the crystal. The influence of the location of the defect on the value of the maximum overheating of the structure and the gate-source voltage is considered. The developed thermal model can serve as the basis for creating methods for diagnosing MOSFET transistors by thermoelectric characteristics and identifying defective products.