2014
DOI: 10.1016/j.optcom.2014.06.020
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Modeling of two wavelength switching using a reflective vertical cavity semiconductor saturable absorber

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Cited by 10 publications
(3 citation statements)
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“…The top mirror reflectivity R t determines the amount of light entering the saturable absorber and therefore controls the nonlinear reflectivity [13]. For such a device the spectral dependent power reflectivity can be calculated by using the standard formula for a FP-cavity incorporating the losses [8].…”
Section: A Bistable Characteristics Of the Nonlinear Devicementioning
confidence: 99%
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“…The top mirror reflectivity R t determines the amount of light entering the saturable absorber and therefore controls the nonlinear reflectivity [13]. For such a device the spectral dependent power reflectivity can be calculated by using the standard formula for a FP-cavity incorporating the losses [8].…”
Section: A Bistable Characteristics Of the Nonlinear Devicementioning
confidence: 99%
“…A VCSSA has numerous applications in optical switching [7], [8] and all-optical signal regeneration [9], [10]. It is designed as a resonant Gires-Tournois interferometer with semiconductor multiple quantum well (MQWs) based absorption layers positioned between an asymmetric Fabry-Perot cavity.…”
Section: Introductionmentioning
confidence: 99%
“…Optical bistable devices are very interesting for many applications such as all-optical logic operations, optical regeneration, optical filtering, analog to digital optical conversion, and polarization modulation and switching [1][2][3][4][5][6]. Vertical cavity semiconductor optical amplifiers (VCSOAs) are attractive for many applications since they have small size, high coupling efficiency to the fiber, low cost, 2D fabrication, and polarization independent gain [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%