Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

Santi, Enrico; Peng, Kang; Mantooth, H. Alan; Hudgins, J.L.

doi:10.1109/ted.2014.2373373

Cited by 95 publications

(32 citation statements)

References 67 publications

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“…One of the keys to being able to realize accurate simulations of SiC circuits is accurate semiconductor device models. This is true for the power electronic circuit analysis [37], [38] as well as the low-voltage circuitry.…”

Section: Semiconductor Device Modelingmentioning

confidence: 95%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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Abstract-The emergence of wide bandgap power semiconductor devices has opened the possibilities of improved electrical performance and power density. Advanced research into wide bandgap power electronics also includes advances in integrated circuit design, semiconductor device modeling, 3D electronic packaging, and computer-aided design of wide bandgap based electronics. These emerging trends are described along with some early results indicating the additional improvements possible in power density. Operation at extreme temperatures also becomes more feasible.Index Terms-Gallium nitride, power integrated circuits, power semiconductor devices, power electronics, silicon carbide, wide bandgap semiconductors.

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Section: Semiconductor Device Modelingmentioning

confidence: 95%

Emerging Trends in Silicon Carbide Power Electronics Design

Mantooth¹

2017

CPSS TPEA

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“…Lower specific on-resistance and higher current density normally on SiC JFETs, without gateoxide problem, may be a better choice in many applications [17]. However, normally-on JFETs pose safety issues in many circuits during startup and/or abnormal gate driver conditions.…”

Section: The Developed Configuration Of the Sic Jfet-based Bdsmentioning

confidence: 99%

Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

Wang

Yang

et al. 2018

Electronics

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Silicon Carbide (SiC)-based Bi-Directional Switches (BDS) have great potential in the construction of several power electronic circuits including multi-level converters, solid-state breakers, matrix converters, HERIC (high efficient and reliable inverter concept) photovoltaic grid-connected inverters and so on. In this paper, two issues with the application of SiC-based BDSs, namely, unwanted turn-on and parasitic oscillation, are deeply investigated. To eliminate unwanted turn-on, it is proposed to add a capacitor (C X ) paralleled at the signal input port of the driver IC (integrated circuit) and the capacitance range of C X is also analytically derived to guide the selection of C X . To mitigate parasitic oscillation, a combinational method, which combines a snubber capacitor (C J ) paralleled with the JFET (Junction Field Effect Transistor) and a ferrite ring connected in series with the power line, is proposed. It is verified that the use of C J mainly improves the turn-off transient and the use of a ferrite ring damps the current oscillation during the turn-on transient significantly. The effects of the proposed methods have been demonstrated by theoretical analysis and verified by experimental results.

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“…(6): As the drain-to-source voltage of the MOSFET (V ds_M ) is above the second pinch-off voltage of the MIS-HEMT (V P_J2 ) (V DS_M ≥ |V P_J2 |), the second MIS-HEMT starts to block voltage. In the third stage, the cascode input capacitance (C iss_C, 3 ) and transfer capacitance (C rss_C,3 ) are the same as the cascode input capacitance (C iss_C,2 ) and transfer capacitance (C rss_C,2 ) in the second stage represented as Eq. (4) and Eq.…”

Section: Analysis Of Cascode Parasitic Capacitancesmentioning

confidence: 99%

“…These models were partially collated and analyzed in the literature. (3) Among these models, the behavioral model can be developed through applying experimentally extracted parameters. To accurately evaluate switching performance, many previous studies have developed behavioral models to obtain realistic characteristic curves.…”

Section: Introductionmentioning

confidence: 99%

Comparing of Parasitic Capacitances on Packaged Cascode Gallium Nitride Field-effect Transistors

2018

Sensors and Materials

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In this work, we examined the electrical characteristics of laboratory-fabricated cascode gallium nitride field-effect transistors (GaN FETs) and analyzed their parasitic capacitances. The calculated results were in good agreement with the experimental results and showed that commercial GaN FETs have superior switching performance, whereas laboratory-fabricated GaN FETs require further improvement.

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Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

Cited by 95 publications

References 67 publications

Emerging Trends in Silicon Carbide Power Electronics Design

Emerging Trends in Silicon Carbide Power Electronics Design

Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

Comparing of Parasitic Capacitances on Packaged Cascode Gallium Nitride Field-effect Transistors

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