2013
DOI: 10.1109/tcad.2013.2249557
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Modeling Power Consumption of NAND Flash Memories Using FlashPower

Abstract: Abstract-Flash is the most popular solid-state memory technology used today. A range of consumer electronics products, such as cell-phones and music players, use flash memory for storage and flash memory is increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and servers. There is a rich microarchitectural design space for flash memory and there are several architectural options for incorporating flash into the memory hierarchy. Exploring this design space requires detai… Show more

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Cited by 39 publications
(17 citation statements)
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“…The F-N tunneling occurs when the applied electric field between the substrate and the CG is sufficiently large to overcome the potential barrier if the FG is charged. F-N tunneling is widely employed in actual flash memories since the voltage required for the write operation is lower than in HEI-based memory cells [33,34,35]. …”
Section: Technical Backgroundmentioning
confidence: 99%
See 2 more Smart Citations
“…The F-N tunneling occurs when the applied electric field between the substrate and the CG is sufficiently large to overcome the potential barrier if the FG is charged. F-N tunneling is widely employed in actual flash memories since the voltage required for the write operation is lower than in HEI-based memory cells [33,34,35]. …”
Section: Technical Backgroundmentioning
confidence: 99%
“…An SLC flash performs the read operation in only one stage, which involves lower read/write access time than any of the multi-level technologies [33]. In particular, in comparison with SLC technology, MLC requires up to four times more time to write and 2.5 times more to read [36].…”
Section: Technical Backgroundmentioning
confidence: 99%
See 1 more Smart Citation
“…12 where P avg is the average power consumption of the specific SSD devices involved. A reference estimation for the above power consumption values (that however are very NAND flash device-dependent) comes from the models and hardware details presented in [33][39] and [7].…”
Section: Disk Solicitation Energy-oriented Attacksmentioning
confidence: 99%
“…A log-based write strategy has been proposed at the MTD layer to provide extra ECC redundancy. Other works focus on the crash recovery [20], [21], energy optimization [22], or real-time performance [23] of NAND flash memory storage systems. Although recent literatures have investigated from the perspective of the file system and hardware implementation of flash, they have not yet explored opportunities at the level between file system and flash translation layer, with the resulting advantage that no changes are required to the file system, cache hierarchy, or hardware implementation of the flash memory chip.…”
Section: Introductionmentioning
confidence: 99%