Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET

Panchanan, Suparna; Maity, Reshmi; Baishya, Srimanta; Maity, N. P.

doi:10.1007/s12633-020-00607-x

Cited by 34 publications

(13 citation statements)

References 38 publications

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“…With 100 m of track and field as the measurement unit, four recording points are set, and 3 ~4 recorders are arranged at each point to record the accurate starting time of 2 ~3 HIT group athletes in the fast running stage and jogging stage, respectively, so as to correspond to the polar table time for HR extraction and analysis. The MICT team arranged two recorders to record the starting time of the whole test [18,19].…”

Section: Methodsmentioning

confidence: 99%

Modeling and Simulation of Basketball Players’ Cardiopulmonary Endurance Sensor under Different Intensity Training

Dai¹

2022

Journal of Sensors

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In order to explore the effects of HIT and MICT on aerobic endurance of college basketball players. By analyzing the difference between the cardiorespiratory endurance of basketball-specialized college students and the certain correlation between their athletic ability, it can better serve the practice of basketball training and provide certain theoretical guidance and theoretical guidance for the improvement of basketball-specialized college students’ athletic fitness, with a practical application value. 37 male college basketball players were randomly divided into the HIT group and MICT group. They were trained four times a week for 10 weeks. The special indexes of cardiopulmonary and basketball were measured during and before and after exercise. The experiment shows that the heart rate in HIT fast running stage is significantly higher than that in MICT, and the stimulation to cardiopulmonary function is stronger. HIT and MICT are difficult to improve athletes’ VO2max, but they can significantly improve the utilization rate of VO2max of VAT, and the effect of HIT is better than MICT. HIT and MICT have significant effects on improving the performance of 15 m × 17 × 4 run, and the former has obvious advantages. However, in terms of improving the performance of 3/4 sprint, HIT improved significantly.

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Section: Methodsmentioning

confidence: 99%

Modeling and Simulation of Basketball Players’ Cardiopulmonary Endurance Sensor under Different Intensity Training

Dai¹

2022

Journal of Sensors

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“…Much efforts have been made to reduce power dissipations in conventional CMOS circuits, such as reducing switching activity ( ) a , reducing load capacitance ( ) C , L dropping the applied voltage ( ) V DD and lowering the charging frequency ( ) f . Scaling of MOS devices also down to nanoelectronics challenged predictable and intolerable short channel effects (SCE's) [10][11][12][13][14][15][16]. Though it has severe limitations as scaling down of the transistor threshold voltage ( ) V , T it leads to drastically increase in sub-threshold leakage current.…”

Section: Introductionmentioning

confidence: 99%

A power efficient fully adiabatic logic circuit design approach: application to inverter and 8421 to excess-3 code converter

Vanlalchaka

Maity

2023

Eng. Res. Express

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Decreasing power consumption is the leading challenge for very-large-scale-integrated (VLSI) designers. This paper introduces an innovative prototype for a power-efficient standard or a fully-adiabatic binary-coded-decimal (BCD) 8421 to Excess-3 (XS-3) code converter. The proposed design is compared with traditional complementary metal oxide semiconductor (CMOS) as well as two popular fully adiabatic logic families: adiabatic dynamic CMOS logic (ADCL) and two phase clocked adiabatic static CMOS logic (2PASCL). This investigation was conducted at frequencies ranging from 100 to 900 MHz. The circuit employs 0.3µm CMOS technology, with channel length and width set at 0.3µm and 0.75µm, respectively. The power savings for the proposed logic at 500 MHz when compared to standard CMOS logic, ADCL, and 2PASCL are 54.54%, 28.57%, and 16.67%, respectively

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“…The inversion charge density at the virtual cathode position in the symmetric DG-FinFET will become, From [27], the extra potential DF sym ( ) generated in the Si channel due to SCEs at the virtual cathode position can be written as,…”

mentioning

confidence: 99%

“…y m can be calculated by setting the surface potential F ( ) derivative with respect to channel direction y ( ) to zero. The detailed calculation of F is given in our previous work [27]. The detailed calculation is given below.…”

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confidence: 99%

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Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

et al. 2023

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An inversion charge-based threshold voltage model is proposed for 10 nm channel length Tri-gate (TG) FinFET. The variation threshold voltage has been studied with respect to fin width W f i n for different fin height H f i n and channel length L . The effect of width quantization has been explained with the help of the quantum mechanical effect (QME). A precise comparison of threshold voltage in terms of classical mechanics and quantum mechanics depicts the presence of width quantization in short channel device. The improvement of the short channel effects (SCEs), like subthreshold swing (SS), drain-induced barrier lowering (DIBL) and threshold voltage roll off have been studied. The impact of channel length to fin width ratio on DIBL and S S has been examined. The improvement of the SCEs at the same oxide thickness has been observed for high-k dielectric material. The potential and effect of hafnium oxide (HfO2) have been discussed and validated using technology computer-aided design (TCAD) simulation.

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Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET

Cited by 34 publications

References 38 publications

Modeling and Simulation of Basketball Players’ Cardiopulmonary Endurance Sensor under Different Intensity Training

Modeling and Simulation of Basketball Players’ Cardiopulmonary Endurance Sensor under Different Intensity Training

A power efficient fully adiabatic logic circuit design approach: application to inverter and 8421 to excess-3 code converter

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

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