Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells

Xiao, Yuanzhang; Li, Z. Q.; Lestrade, Michel

doi:10.1117/12.860958

Cited by 3 publications

(1 citation statement)

References 20 publications

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“…Impurity concentration (trap density) and the electrons/holes capture cross section are used to specify the trap states. 24) The minority carrier lifetime is then expressed as…”

Section: Device Simulationmentioning

confidence: 99%

High Efficiency Cu(In,Ga)Se₂ Flexible Solar Cells Fabricated by Roll-to-Roll Metallic Precursor Co-sputtering Method

Zhang

Hollars²,

Kanicki

2013

Jpn. J. Appl. Phys.

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We report on a Cu(In,Ga)Se 2 (CIGS) solar cell fabricated on flexible stainless steel substrate by a low cost mass production roll-to-roll process. Fabricated device has a high energy conversion efficiency of 14%, with short circuit current density (J sc) of 36.6 mA cm À2 and open circuit voltage (V oc) of 0.55 V. A two-dimensional (2D) simulation model for CIGS solar cell design and optimization was proposed. Opto-electrical properties showed that both experimental and simulated results are consistent with each other. The photons absorber in CIGS solar cells was prepared by co-sputtering metallic precursors of In and CuGa followed by thermal annealing in Se vapor. The device chemical properties were analyzed by secondary ion mass spectrometry (SIMS) and transmission/scan electron microscopy (TEM/SEM). Indium and gallium interdiffusions were observed during the growth of film, forming a band grading in CIGS layer. Accumulation of In at the top CIGS surface, resulting in a low bandgap, was responsible for the limited output open circuit voltage. Nano-scale voids were observed in the grown CIGS layer. A model based on Kirkendal effect and interdiffusion of atoms during selenization is developed to explain the formation mechanism of these voids. Na and K incorporation as well as metallic impurities diffusion are also discussed.

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“…Impurity concentration (trap density) and the electrons/holes capture cross section are used to specify the trap states. 24) The minority carrier lifetime is then expressed as…”

Section: Device Simulationmentioning

confidence: 99%

High Efficiency Cu(In,Ga)Se₂ Flexible Solar Cells Fabricated by Roll-to-Roll Metallic Precursor Co-sputtering Method

Zhang

Hollars²,

Kanicki

2013

Jpn. J. Appl. Phys.

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Conduction Mechanism in n-CdSe/p-ZnTe Heterojunction

Acharya

Bangera

Shivakumar³

2016

Journal of Elec Materi

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Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

Akkad

Abdulraheem

2013

Journal of Applied Physics

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We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy measurements on films deposited at different substrate temperatures (up to 325 °C) yielded activation energy of 12 kJ/mole for the grains growth. The results of XPS and electrical and optical measurements provide evidence for the formation of the ternary zinc copper telluride alloy in films containing Cu concentration above ∼4 at. %. The XPS results suggest that copper is incorporated in the alloy with oxidation state Cu1+ so that the alloy formula can be written Zn1−yCuy Te with y = 2−x, where x is a parameter measuring the stoichiometry in the Cu site. The formation of this alloy causes appreciable shift in the binding energies of the XPS peaks besides an IR shift in the energy band gap. Detailed analysis of the optical absorption data revealed the presence of two additional transitions, besides the band gap one, originating from the Γ8 and Γ7 (spin-orbit) valence bands to a donor level at ∼0.34 eV below the Γ6 conduction band. This interpretation yields a value for the valence band splitting energy Δ ≅ 0.87 eV independent of copper concentration. On the other hand, the mechanism of formation of the alloy is tentatively explained in terms of a point defect reaction in which substitutional Cu defect CuZn is also created. Assuming that substitutional Cu is the dominant acceptor in the Zn rich alloy as in ZnTe, its formation energy was determined to be 1.7 eV close to the theoretical value (1.41 eV) in ZnTe.

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Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells

Cited by 3 publications

References 20 publications

High Efficiency Cu(In,Ga)Se₂ Flexible Solar Cells Fabricated by Roll-to-Roll Metallic Precursor Co-sputtering Method

High Efficiency Cu(In,Ga)Se₂ Flexible Solar Cells Fabricated by Roll-to-Roll Metallic Precursor Co-sputtering Method

Conduction Mechanism in n-CdSe/p-ZnTe Heterojunction

Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

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Modeling study for developing CdZnTe(CdSe)/CIGS tandem solar cells

Cited by 3 publications

References 20 publications

High Efficiency Cu(In,Ga)Se2 Flexible Solar Cells Fabricated by Roll-to-Roll Metallic Precursor Co-sputtering Method

High Efficiency Cu(In,Ga)Se2 Flexible Solar Cells Fabricated by Roll-to-Roll Metallic Precursor Co-sputtering Method

Conduction Mechanism in n-CdSe/p-ZnTe Heterojunction

Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

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Product

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High Efficiency Cu(In,Ga)Se₂ Flexible Solar Cells Fabricated by Roll-to-Roll Metallic Precursor Co-sputtering Method

High Efficiency Cu(In,Ga)Se₂ Flexible Solar Cells Fabricated by Roll-to-Roll Metallic Precursor Co-sputtering Method