Modeling Surface Recombination with Enhanced Devices Network for Optoelectronics

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

“…The concept of Generalized Lumped Devices [4], [5] is now discussed briefly. A total of four Generalized Devices, presented in Fig.…”

“…Among these elements are the Generalized Resistance, the Generalized Homojunction and the Generalized Diode which are characterized by two additional nodes that are used to simulate equivalent voltages, proportional to the excess carrier density, and equivalent currents, proportional to the excess carrier gradient. The last device is the Surface Recombination Element, single pin ended, accounting for surface recombination effects (more details can be found in [5]). The Finite Difference Method (FDM) is used to convert the set of drift-diffusion and continuity partial differential equations in a system of linear equations that can be mapped on a mesh.…”

“…The concept of Generalized Devices which takes into account minority carriers and related effects was first presented in [1], then extended and used to predict the impact of minority carriers injection in HV-CMOS integrated circuits in [2], [3]. Recently, following this approach, Rossi et al [4], [5] included light-semiconductor interaction in these elements and demonstrated full SPICE simulation of passive photo-sensors and solar cells without any specific compact model and without introducing empirical parameters. In this work, we apply this modeling strategy to a CMOS Active Pixel Sensor (APS), simulating both the operation of a single pixel, including the photodiode and the circuit, and the crosstalk between adjacent pixels.…”