Modeling techniques suitable for CAD-based design of internal matching networks of high-power RF/microwave transistors

Abstract

Abstract-A scalable and accurate simulation technique to be used for the computer-aided design of matching networks employed within high-power RF transistors is presented. A novel measurement methodology is developed and utilized during the validation of the proposed analysis approach. Appropriate segmentation techniques were developed, which are consistent with the design approach of the high power transistor, that take into account the overall complexity of the internal match of most modern RF high power transistors, while preserving important electromagnetic interactions. By being able to properly decouple the linear portion of the overall packaged transistor model, an objective accuracy assessment via the comparison of measured vs. simulated results of the internal matching network was accomplished. The level of accuracy obtained provides credence to the idea of a full CAD driven design process of the internal match of high-power RF transistors.

On the modeling of LDMOS RF power transistors

“…Through the development of segmentation procedures, it is possible to divide the entire packaged transistor into sub-sections, and to simulate the components in finite-element and method-of-moments based simulators. The results are then combined using network theory to generate the model of the matching networks [20]. Often, the manifold metallizations can be modeled as simple capacitors, but for more accurate models we rely upon electromagnetic simulations of the metal polygon, often including the bondwire termination itself.…”

Characterization and Modeling of LDMOS Power FETs for RF Power Amplifier Applications

“…This is ensured by careful calibration of both the measurement system and the simulation, to produce well-defined and accessible reference planes. The second issue is that any interelement coupling, such as mutual inductance between arrays of bonding wires, must be properly characterized [1].…”

“…3, and the component values can be found from well-known expressions [2]. Such a model can be The magnitude of the simulated and measured input reflection coefficient of the device for the matching network when it is terminated in a short-circuit [1]. © 2006 IEEE.…”

A 2-4 GHZ Octave Bandwidth Gan Hemt Power Amplifier With High Efficiency

“…On the other hand, bare die is much cheaper and more flexible to use, which make it possible to put internal matching network and load more than one transistor in the package [9][10][11], while the package parasitics need to be taken into account in order to predict the performance at microwave frequencies. It is difficult to determine the package model from measurements because the internal ports are difficult to be accessed with probe tips.…”