Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs

Chan, Mansun; Su, Pin; Wan, Hui; Lin, Chung-Hsun; Fung, S.K.H.; Niknejad, Ali M.; Hu, Chenming; Ko, P.K.

doi:10.1016/j.sse.2003.12.012

Cited by 33 publications

(10 citation statements)

References 21 publications

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“…These models have been modified and extended for several novel transistors. For example, for SOI (silicon-on-insulator) devices, PSPbased model [66] and BSIM-based model [67,68] have been reported. From the BSIM group, BSIM-IMG model for independent multi-gate MOSFET operation [69] and BSIM-CMG for common multi-gate transistor, that is, FinFET have been developed [70].…”

Section: Modeling Of Novel Transistors and Emerging Devicesmentioning

confidence: 99%

Semiconductor Device Modeling and Simulation for Electronic Circuit Design

Shamsir¹,

Hasan²,

Hassan³

et al. 2020

Modeling and Simulation in Engineering - Selected Problems

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This chapter covers different methods of semiconductor device modeling for electronic circuit simulation. It presents a discussion on physics-based analytical modeling approach to predict device operation at specific conditions such as applied bias (e.g., voltages and currents); environment (e.g., temperature, noise); and physical characteristics (e.g., geometry, doping levels). However, formulation of device model involves trade-off between accuracy and computational speed and for most practical operation such as for SPICE-based circuit simulator, empirical modeling approach is often preferred. Thus, this chapter also covers empirical modeling approaches to predict device operation by implementing mathematically fitted equations. In addition, it includes numerical device modeling approaches, which involve numerical device simulation using different types of commercial computer-based tools. Numerical models are used as virtual environment for device optimization under different conditions and the results can be used to validate the simulation models for other operating conditions.

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Section: Modeling Of Novel Transistors and Emerging Devicesmentioning

confidence: 99%

Semiconductor Device Modeling and Simulation for Electronic Circuit Design

Shamsir¹,

Hasan²,

Hassan³

et al. 2020

Modeling and Simulation in Engineering - Selected Problems

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“…Naturally, BSIMSOI shares many features and model modules with BSIM3 and BSIM4. It took major effort to develop the floating body model [23] and the self-heating model [24,25] , both of which required the use of a sub-circuit to model the history dependency of the underlying physical phenomena. Major contributions were made by Samuel Fung, Dennis Sinitsky, Mansun Chan, Pin Su, Hui Wan, and Xuemei Jane Xi.…”

Section: Bsim4 and Bsimsoimentioning

confidence: 99%

BSIM—making the first international standard MOSFET model

2008

Sci. China Ser. F-Inf. Sci.

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BSIM (Berkeley Short-Channel IGFET) became the first international industry standard model for simulation of MOS integrated circuits in 1997.The cumulative sales of ICs that have been designed with the aid of BSIM and produced for computing, communication, consumer, and industrial applications is estimated to be around 400 billion US dollars. From 0.35 μm CMOS to multi-gate FinFET, BSIM serves a wide range of technologies. Many China educated researchers have contributed to its success. BSIM, MOS, compact modeling Circuit simulation and compact modelAn integrated circuit contains millions to billions of transistors. The functionality and performance of the circuits must be verified by computer simulation before it is committed to expensive fabrication. Circuits are simulated with a method known as SPICE that was developed by Profs. Ron Rohrer and Don Pederson and their students at University of California, Berkeley. The nodal equations of a large nonlinear circuit are solved by efficient matrix analysis. The circuits are nonlinear because the transistors are nonlinear device.The complex behavior of the transistor drain current, I d (V g , V d , V s , V b , L, W), is accurately represented by an analytical equation known as a compact model. If this equation is printed on paper, it may occupy a few pages. The length and complexity of the functions used in the equation have significant impact on the circuit simulation time. It is important to balance the computational efficiency of the model and its accuracy. In addition the terminal charges (or capacitances) are also represented with analytical equations.The compact model equations inevitably contain many adjustable constants known as model

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“…However, for partially depleted (PD) SOI technologies that are widely used in IC products and commonly applied to those new functional blocks, floating-body effects (FBE) and related issues still remain technology barriers to device engineers and circuit designers, especially for analog and RF applications [1][2][3]. Although a few body contact (BC) structures have been constantly studied and already recognized as effective ways to suppress floating-body effects, there still lacks straightforward and comprehensive evaluation among different BC structures, especially for DC, analog/RF, and noise characteristics that are important to device and circuit designs.…”

Section: Introductionmentioning

confidence: 99%