Modeling the impact of fundamental and quantum resistance on the performance of SWCNT‐based RLC interconnects

Abstract

An analytical interconnect model for single‐walled carbon nanotube (SWCNT) interconnects is proposed using Fourier method. Nonapproximated transfer function of the RLC SWCNT interconnect is modeled. The effect of fundamental and quantum resistance of SWCNT is incorporated in the transfer function. The propagation delay and overshoot/undershoot voltages are computed using Fourier series technique for SWCNT interconnects. Further, the effect of inductance that is prominent in CNTs is shown in terms of increased number of harmonics. Comparative analysis is carried out for SWCNT and Cu interconnects using MATLAB and SPICE at 65‐nm technology node for various performance parameters. Good accuracy is observed between the analytical and simulated results.