2023
DOI: 10.17073/1609-3577j.met202306.556
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Modeling the processes of formation of defects that form deep levels in SiON/AlGaN/GaN

K. L. Еnisherlova,
I. A. Mikhaylov,
L. A. Seidman
et al.

Abstract: The effect on the electrical parameters of the SiON/AlGaN/GaN structures of treatment of different durations of low-energy nitrogen plasma was studied. The AlGaN surface was subjected to plasma treatment in the working chamber of the plasma-chemical deposition unit before starting the monosilane to form the SiON film. Changes in the transport properties (conductivity and mobility) of the canal and capacitive properties of the structures were evaluated. It has been experimentally shown that such treatment leads… Show more

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