Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits

Wee, Jae-Kyung; Park, Youngjune; Min, Hong‐Shick; Cho, Dae‐Hyung; Seung, Manho; Park, Hun-Sug

doi:10.1109/22.721145

Cited by 38 publications

(3 citation statements)

References 6 publications

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“…• The current in the silicon substrate, and hence the electric field intensity, does not change in the direction of propagation, i.e. ∂E z /∂z = ∂J z /∂z = 0 [7,11]. • The excitation source is sinusoidally time varying.…”

Section: Assumptionsmentioning

confidence: 99%

New closed-form formula for frequency-dependent resistance and inductance of IC interconnects on silicon substrate

Ymeri¹,

Nauwelaers²,

Maex³

2001

J. Micromech. Microeng.

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A highly accurate closed-form approximation of frequency-dependent mutual impedance per unit length of lossy silicon substrate coplanar-strip IC interconnects is developed. The derivation is based on a quasi-stationary full-wave analysis and Fourier integral transformation. The derivation shows the mathematical approximations needed to obtain the desired expressions. As a result, for the first time, we present a new, simple, yet surprisingly accurate, closed-form expression which yields accurate estimates of frequency-dependent mutual resistance and inductance per unit length of coupled interconnects for a wide range of geometrical and technological parameters. The developed formulae describe the mutual line impedance behaviour over the whole frequency range (i.e. also in the transition region between the skin effect, slow-wave and dielectric quasi-TEM modes). The results have been compared with reported data obtained by the modified quasi-static spectral domain approach and new CAD-oriented equivalent-circuit model procedure.

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Section: Assumptionsmentioning

confidence: 99%

New closed-form formula for frequency-dependent resistance and inductance of IC interconnects on silicon substrate

Ymeri¹,

Nauwelaers²,

Maex³

2001

J. Micromech. Microeng.

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show abstract

“…In this case losses in the semiconductor substrate become significant and should be taken into account. In order to accomplish this, it is necessary to analyse and model the broadband characteristics [2,[4][5][6][7][8][9] of the on-chip interconnects on a silicon oxide-silicon substrate. With respect to the substrate conductivity and signal frequency, in general three wave propagation modes can be distinguished which lead to different formulae for the line parameters (quasi-TEM, slowwave and skin-effect mode, respectively) [9].…”

Section: Introductionmentioning

confidence: 99%

A physics-based VLSI interconnect model including substrate and conductor skin effects

Ymeri

Nauwelaers

Maex

et al. 2004

Semicond. Sci. Technol.

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The goal of this work was to model the influence of the substrate and conductor skin effects on the RL line characteristics of on-chip interconnects. The proposed modelling approach is based on the skin-effect theory results for rectangular wires and the complex integration technique for perturbation series per unit length impedance of silicon substrate. It is shown that the calculated frequency-dependent distributed inductance and the associated resistance are in good agreement with the results obtained from rigorous full-wave solutions and CAD-oriented analytic modelling technique.

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“…This problem is particularly important in high-frequency mixedsignal integrated circuits. In order to accomplish this, it is necessary to analyse and model the broadband characteristics [2][3][4][5][6][7] of the on-chip interconnect on a silicon oxide-silicon substrate. With respect to the substrate conductivity and signal frequency, in general three wave propagation modes can be distinguished which lead to different formulas for the line parameters (quasi-TEM, slow-wave and skin-effect mode, respectively) [7].…”

Section: Introductionmentioning

confidence: 99%

Frequency-dependent closed-form expressions for inductance and resistance of a single interconnect on a silicon substrate

Ymeri

Nauwelaers

Maex

et al. 2002

J. Phys. D: Appl. Phys.

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New closed-form expressions to calculate frequency-dependent distributed inductance and the associated distributed series resistance of a single interconnect on a lossy silicon substrate (CMOS technology) are presented. The proposed analytical model for series impedance is based on a self-consistent field method and the vector magnetic potential equation. It is shown that the calculated frequency-dependent distributed inductance and the associated resistances are in good agreement with the results obtained from rigorous full-wave solutions and CAD-oriented equivalent-circuit modelling approach.

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Modeling the substrate effect in interconnect line characteristics of high-speed VLSI circuits

Cited by 38 publications

References 6 publications

New closed-form formula for frequency-dependent resistance and inductance of IC interconnects on silicon substrate

New closed-form formula for frequency-dependent resistance and inductance of IC interconnects on silicon substrate

A physics-based VLSI interconnect model including substrate and conductor skin effects

Frequency-dependent closed-form expressions for inductance and resistance of a single interconnect on a silicon substrate

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