Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Rossetti, M.; Fiore, Andrea; Sęk, G.; Zinoni, C.; Li, Lianhe

doi:10.1063/1.3176499

Cited by 15 publications

(15 citation statements)

References 45 publications

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“…The out-scattering of charge-carriers thus becomes more probable at elevated charge-carrier temperatures [URA02,ROS09a]. Note that in the derivation of above expressions, only a quasi-equilibrium within the quantum well must be assumed without making assumptions about the quantum-dot occupations.…”

Section: Charge-carrier Scattering In Quantum-dot Structuresmentioning

confidence: 99%

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Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Charge-carrier Scattering In Quantum-dot Structuresmentioning

confidence: 99%

“…An increase in lattice and chargecarrier temperature often leads to reduced efficiency and diminished device performance [KLO99,ROS09a]. On the other hand, higher temperatures were shown, e.g., to improve the performance of mode-locked laser devices [CAT07].…”

Section: Quantum-dot Laser Carrier-heating Modelmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…The out-scattering of chargecarriers thus becomes more probable at elevated charge-carrier temperatures [34,35]. Note that in the derivation of above expressions, only a quasi-equilibrium within the quantum well must be assumed without making assumptions about the quantumdot occupations.…”

Section: Detailed Balancementioning

confidence: 99%

Theory of Quantum-Dot Optical Devices

Lingnau

2015

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

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Modern semiconductor optical devices can consist of a complex arrangement of several different semiconductor crystal layers. By further processing, the semiconductor structure is then shaped into the desired device geometry. Additional steps, such as planarization and contacting, are then required to yield the final usable device. Naturally, a complete microscopic description of the resulting object in all its degrees of freedom is not tractable. Therefore, a restriction to only few degrees of freedom is required, while still maintaining all necessary aspects determining the system behavior.In the theoretical description of quantum-dot semiconductor optical devices, this means a restriction to the active region, i.e., the parts where the light-matter interaction occurs, and the immediate surrounding matter. Since the optical interactions between the electric field and charge carriers (electrons and holes) are being considered, dynamic equations for these quantities must be derived.There exist theoretical models for quantum-dot lasers on varying levels of sophistication. Microscopic models that take into account the exact band structure and many-body interactions [1][2][3][4] can describe the complex energy structure of quantum dots very realistically, but these approaches are too complicated to be applied in dynamic problems. On the other hand, simple rate-equation models exist [5][6][7] that can be easily implemented and require little computation power, and often allow for analytical treatment. These models, however, are prone to oversimplification, possibly neglecting important aspects that would lead to different results. In between these two types of approaches there exist multi-rate equation models [8][9][10][11], that take into account the delicate energy structure of quantum-dot active media. These models offer a balance between complexity and practicability. In this spirit, we will develop a quantum-dot laser model that takes into account the most important effects needed to realistically describe the laser behavior, while still being simple enough for thorough dynamic studies.

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“…10,11 Rossetti et al 10 suggest that the increase in threshold current with temperature is due to thermal escape of carriers followed by monomolecular ͑defect related͒ NR recombination in the wetting layer ͑WL͒ 11 also suggested that the use of power laws to describe the recombination processes in QDs may not be a valid approach. Previous work by Marko et al…”

mentioning

confidence: 99%

“…The decrease in threshold current with increasing pressure is due to decreasing NR recombination ͑since radiative recombination at this temperature accounts for only 6% of the total threshold current͒. Rossetti et al 10 argued that the decrease in threshold current as a function of pressure is due to an improvement in optical confinement, and hence a corresponding decrease in threshold gain with increasing pressure.…”

mentioning

confidence: 99%

Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers

Sayid

Marko

Sweeney

et al. 2010

Applied Physics Letters

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The threshold current density, Jth, and its radiative component, Jrad, in 1.55 μm InAs/InP (100) quantum dot lasers are measured as a function of temperature and hydrostatic pressure. We find that Jrad is relatively temperature insensitive. However, Jth increases significantly with temperature leading to a characteristic temperature T0=72 K over the range 220–290 K. Nonradiative recombination accounts for up to 94% of Jth at T=293 K. Jth decreases with increasing pressure by 35% over 8 kbar causing an increase in T0 from 72 to 88 K. The results indicate that nonradiative Auger recombination determines temperature behavior of these devices and T0 value.

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Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Cited by 15 publications

References 45 publications

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Theory of Quantum-Dot Optical Devices

Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers

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