Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

Abstract

The variability of memristive devices using multilayer hexagonal boron nitride (h-BN) coupled with Ti and Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in depth using different numerical techniques. We extract the reset voltage using three different methods, quantify its cycle-tocycle variability, calculate the charge and flux that allows to minimize the effects of electric noise and the inherent stochasticity of resistive switching, describe the device variability using time series analyses to assess the "memory" effect, and employ a circuit breaker simulator to understand the formation and rupture of the percolation paths that produce the switching. We conclude that the cycle-to-cycle variability of the Au/Ti/h-BN/Au devices presented here is higher than that previously observed in Au/h-BN/Au devices, and hence, they may be useful for data encryption.

Stochastic resonance in 2D materials based memristors

“…4 Materials Science and Engineering Program, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. ✉ email: jroldan@ugr.es; mario.lanza@kaust.edu.sa non-volatile bipolar resistive switching (RS) behaviour, which has been demonstrated by several independent groups [25][26][27] .…”

A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices

“…Various methods can be used to automatically determine such parameters from longtime series mainly to analyze and correctly reproduce the C2C variability. [19][20][21][22][23] At the same time, the result significantly DOI: 10.1002/pssa.202200520…”

“…Various methods can be used to automatically determine such parameters from long‐time series mainly to analyze and correctly reproduce the C2C variability. [ 19–23 ] At the same time, the result significantly depends not only on the extraction method used, but also on the measurement conditions and the fabrication technology of memristive devices. Therefore, it is a very relevant problem to develop and test new numerical methods for extraction, modeling, and prediction of variability on specific memristive devices.…”

Variability in Resistive Memories

“…[145] Other materials show lower ACFs when analyzing V set or V reset data, this suggests different physical mechanisms behind RS operation with a lesser degree of correlation between consecutive cycles and, consequently, a reduced link to the dielectric morphology. [249] Figure 36. ACF and PACF versus cycle lag for the differentiated series.…”