Modeling the voltage nonlinearity of high-k MIM capacitors

Kannadassan, D.; Karthik, R.; Baghini, Maryam Shojaei; Mallick, P. S.

doi:10.1016/j.sse.2013.10.012

Cited by 16 publications

(9 citation statements)

References 19 publications

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“…The capacitance–voltage ( C – V ) curves are, in a satisfactory approximation, characteristic of those commonly seen with metal–insulator–metal (MIM)-like structures with quite leaky dielectric layers, i.e., with certain plateau tending to appear around zero bias voltages, and further deviations in the effective capacitance with increase in the absolute bias values. − In the present case, the decrement of capacitance at larger biases is obvious, especially in the films with relatively low thicknesses, i.e., those grown with the cycle ratios 300:20, 60:3, or 50:1. One can propose that capacitance is influenced, besides the major affections from the film thickness and permittivity, also by the conductivity of the films, enabling leakage of charge carriers.…”

Section: Results and Discussionsupporting

confidence: 52%

Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films

et al. 2017

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Mixed films of a high-permittivity oxide, Er 2 O 3 , and a magnetic material, Fe 2 O 3 , were grown by atomic layer deposition on silicon and titanium nitride at 375 °C using erbium diketonate, ferrocene, and ozone as precursors. Crystalline phases of erbium and iron oxides were formed. Growth into three-dimensional trenched structures was demonstrated. A structure deposited using tens to hundreds subsequent cycles for both constituent metal oxide layers promoted both charge polarization and saturative magnetization compared to those in the more homogeneously mixed films.

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Section: Results and Discussionsupporting

confidence: 52%

Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films

et al. 2017

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“…The results are tabulated in Table II: VCC-α was extracted to be ~1.6×10 3 ppm/V 2 for and VCC-β to be ~4.8×10 3 ppm/V for S3 test vehicles, whereas some obvious deviated values are found for both VCC-α and VCC-β of R3 test vehicles, like 2.00×10 3 ppm/V 2 and 2.99×10 3 ppm/V. The value of VCC-α is correlated with polarization condition of the dielectric layer, and VCC-β is determined by the amount of trapped charges in the dielectric layer [8], [9]. Therefore, these C-V characterization results suggest that the dielectric composition and the total amount of trapped charges in the dielectric layer become instable as trench sidewall roughness becomes higher.…”

Section: B Electrical Characterizationmentioning

confidence: 93%

Dielectric Quality of 3D Capacitor Embedded in Through-Silicon Via (TSV)

Lin

Tan

2018

2018 IEEE 68th Electronic Components and Technology Conference (ECTC)

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The concept of 3D capacitor embedded in TSV has been proposed recently to achieve ultrahigh capacitance density (up to 5,621.8 nF/mm 2 ). This paper aims to investigate the effects of trench sidewall roughness and electrode deposition method on the dielectric quality of the 3D capacitor embedded in TSV. The test vehicles of 3D embedded capacitors were designed and fabricated with variations, which were the combinations of: (a) two options of trench sidewall roughness (30 and 290 nm) and (b) three options of electrode deposition methods (sputtering, ALD with air exposure, and ALD without air exposure). For test vehicles with different sidewall roughness but the same electrode deposition method, insignificant change of the leakage current density and dielectric strength can be observed in their J-E plots. Despite thicker dielectric layer, the leakage current density of sputtering test vehicles becomes higher than their ALD counterparts at bias greater than 3.5 MV/cm and dielectric strength ends up lower (~7.8 vs. >9 MV/cm). Therefore, sputtering is found not suitable for the fabrication of high performance 3D embedded capacitor. Besides, the elimination of air exposure during the process of ALD test vehicles helps suppress the leakage current density when the bias is greater than 4 MV/cm: e.g. it drops from 2.78×10 -2 to 4.83×10 -5 A/cm 2 at 8 MV/cm. Moreover, C-V characterization results suggest that the dielectric composition and the total amount of trapped charges become instable for the test vehicles with rough sidewall (290 nm), whereas they are consistent for the test vehicles with smooth sidewall (30 nm). These findings can provide valuable information for performance optimization and long-term reliability assessment of 3D capacitor embedded in TSV.

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“…Moreover, their fabrication is performed at room temperature or lower, which is important for back-end processing. High capacitance densities [9], [10], as well as low leakage currents [7], and good stability in terms of frequency [8] have been demonstrated for such capacitors.…”

Section: Introductionmentioning

confidence: 96%

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Hourdakis

Travlos

Nassiopoulou

2015

IEEE Trans. Electron Devices

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We report on a high-performance metal-insulatormetal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 −8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent <0.1 is shown for the anodic alumina used. Moreover, by introducing nanomodulation to the capacitor electrode, the effective surface area of the capacitor is increased, allowing the use of thicker dielectric layers for the same value of capacitance density. The use of thicker dielectric layers is shown to decrease the leakage current by an order of magnitude and the nonlinearity coefficient α by a factor of 1.8 for the larger capacitance density devices. These results suggest a novel strategy for reducing the α coefficient of a MIM capacitor without decreasing the capacitance density. IndexTerms-Anodic alumina, high-k dielectric, metal-insulator-metal (MIM) capacitor.

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Modeling the voltage nonlinearity of high-k MIM capacitors

Cited by 16 publications

References 19 publications

Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films

Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films

Dielectric Quality of 3D Capacitor Embedded in Through-Silicon Via (TSV)

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

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